전자부품 데이터시트 검색엔진
Selected language     Korean  ▼
부품명
         상세내용
Preview PDF Download HTML-1page HTML-10pages

IKW40T120 데이터시트(Datasheet) 1 Page - Infineon Technologies AG

부품명 IKW40T120
상세내용  LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARAALEL EMCON HE DIODE
PDF  15 Pages
Scroll/Zoom Zoom In 100% Zoom Out
제조사  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
Logo 

 
 1 page
background image
IKW40T120
^
TrenchStop Series
Power Semiconductors
1
Preliminary / Rev. 1 Jul-02
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
Best in class TO247
Short circuit withstand time – 10
µs
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Package
Ordering Code
IKW40T120
1200V
40A
1.8V
150
°C
TO-247AC
Q67040-S4520
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
1200
V
DC collector current
TC = 25°C
TC = 100°C
I C
75
40
Pulsed collector current, tp limited by Tjmax
I Cp ul s
105
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
-
105
Diode forward current
TC = 25°C
TC = 100°C
I F
80
40
Diode pulsed current, tp limited by Tjmax
I Fp ul s
105
A
Gate-emitter voltage
VGE
±20
V
Short circuit withstand time
1)
VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C
t SC
10
µs
Power dissipation
TC = 25°C
Ptot
270
W
Operating junction temperature
T j
-40...+150
Storage temperature
T st g
-55...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
260
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
P-TO-247-3-1
(TO-247AC)
G
C
E
 2 page
background image
IKW40T120
^
TrenchStop Series
Power Semiconductors
2
Preliminary / Rev. 1 Jul-02
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
R thJC
0.45
Diode thermal resistance,
junction – case
R thJC D
0.81
Thermal resistance,
junction – ambient
R thJA
TO-247AC
40
K/W
Electrical Characteristic,
at Tj = 25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
V(BR)CES VGE =0V, IC =1.5m A
1200
-
-
Collector-emitter saturation voltage
VCE(sat )
VGE = 15 V, IC =40A
T j =2 5 °C
T j =125° C
T j =150° C
-
-
-
1.8
2.1
2.3
2.3
-
-
Diode forward voltage
VF
VGE =0V, IF =40A
T j =2 5 °C
T j =125° C
T j =150° C
-
-
-
1.75
1.75
1.75
2.3
-
-
Gate-emitter threshold voltage
VGE(th)
I C =1.5m A, VCE = VGE
5.0
5.8
6.5
V
Zero gate voltage collector current
I CE S
VCE =1200V,
VGE =0V
T j =2 5 °C
T j =150° C
-
-
-
-
0.4
4.0
mA
Gate-emitter leakage current
I GE S
VCE =0V, VGE =20V
-
-
600
nA
Transconductance
g fs
VCE =20V, IC =40A
-21
-
S
Integrated gate resistor
R Gint
6
 3 page
background image
IKW40T120
^
TrenchStop Series
Power Semiconductors
3
Preliminary / Rev. 1 Jul-02
Dynamic Characteristic
Input capacitance
C iss
-
2500
-
Output capacitance
C os s
-
130
-
Reverse transfer capacitance
C rs s
VCE =25V,
VGE =0V,
f
=1MHz
-
110
-
pF
Gate charge
Q Gat e
VCC =960V, I C =40A
VGE =15V
-
203
-
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
L E
T O-247AC
-
-
13
nH
Short circuit collector current
1)
I C( SC )
VGE =15V,t SC≤ 10 µs
VCC = 600V,
T j = 25 ° C
-
210
-
A
Switching Characteristic, Inductive Load,
at Tj=25 °C
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
t d( o n)
-48
-
Rise time
t r
-34
-
Turn-off delay time
t d( of f)
-
480
-
Fall time
t f
-70
-
ns
Turn-on energy
Eon
-3.3
-
Turn-off energy
Eoff
-3.2
-
Total switching energy
Ets
T j =2 5 °C,
VCC =600V, IC =40A,
VGE =0/15V,
R G =15 Ω,
L σ
2) =180nH,
C σ
2) =39pF
Energy losses include
“tail” and diode
reverse recovery.
-6.5
-
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t rr
-
240
-
ns
Diode reverse recovery charge
Q rr
-3.8
µC
Diode peak reverse recovery current
I rr m
-28
A
Diode peak rate of fall of reverse
recovery current during tb
dirr /d t
T j =2 5 °C,
VR =600 V, IF =40A,
diF/dt =800A/ µs
-
370
-
A/
µs
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.
 4 page
background image
IKW40T120
^
TrenchStop Series
Power Semiconductors
4
Preliminary / Rev. 1 Jul-02
Switching Characteristic, Inductive Load,
at Tj=150 °C
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
t d( o n)
-52
-
Rise time
t r
-40
-
Turn-off delay time
t d( of f)
-
580
-
Fall time
t f
-
120
-
ns
Turn-on energy
Eon
-5.0
-
Turn-off energy
Eoff
-5.4
-
Total switching energy
Ets
T j =150° C
VCC =600V, IC =40A,
VGE =0/15V,
R G = 1 5Ω ,
L σ
1) =180nH,
C σ
1) =39pF
Energy losses include
“tail” and diode
reverse recovery.
-
10.4
-
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t rr
-
410
-
ns
Diode reverse recovery charge
Q rr
-8.8
-
µC
Diode peak reverse recovery current
I rr m
-36
-
A
Diode peak rate of fall of reverse
recovery current during tb
dirr /d t
T j =150° C
VR =600 V, IF =40A,
diF/dt =800A/ µs
-
330
A/
µs
1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.
 5 page
background image
IKW40T120
^
TrenchStop Series
Power Semiconductors
5
Preliminary / Rev. 1 Jul-02
10Hz
100Hz
1kHz
10kHz
100kHz
0A
20A
40A
60A
80A
100A
T
C=110°C
T
C=80°C
1V
10V
100V
1000V
0,1A
1A
10A
100A
DC
10µs
t
p=3µs
50µs
500µs
20ms
150µs
f
, SWITCHING FREQUENCY
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 600V,
VGE = 0/+15V, RG = 15Ω)
Figure 2. Safe operating area
(D = 0, TC = 25°C,
Tj ≤150°C;VGE=15V)
25°C
50°C
75°C
100°C
125°C
0W
50W
100W
150W
200W
250W
25°C
75°C
125°C
0A
10A
20A
30A
40A
50A
60A
70A
TC, CASE TEMPERATURE
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(Tj ≤ 150°C)
Figure 4. Collector current as a function of
case temperature
(VGE ≥ 15V, Tj ≤ 150°C)
Ic
Ic
 6 page
background image
IKW40T120
^
TrenchStop Series
Power Semiconductors
6
Preliminary / Rev. 1 Jul-02
0V
1V
2V
3V
4V
5V
6V
0A
10A
20A
30A
40A
50A
60A
70A
80A
90A
100A
15V
7V
9V
11V
13V
V
GE=17V
0V
1V
2V
3V
4V
5V
6V
0A
10A
20A
30A
40A
50A
60A
70A
80A
90A
100A
15V
7V
9V
11V
13V
V
GE=17V
VCE, COLLECTOR-EMITTER VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
Figure 6. Typical output characteristic
(Tj = 150°C)
0V
2V
4V
6V
8V
10V
12V
0A
10A
20A
30A
40A
50A
60A
70A
80A
90A
100A
25°C
T
J=150°C
-50°C
0°C
50°C
100°C
0,0V
0,5V
1,0V
1,5V
2,0V
2,5V
3,0V
3,5V
I
C=40A
I
C=80A
I
C=25A
I
C=10A
VGE, GATE-EMITTER VOLTAGE
TJ, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic
(VCE=20V)
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
 7 page
background image
IKW40T120
^
TrenchStop Series
Power Semiconductors
7
Preliminary / Rev. 1 Jul-02
0A
20A
40A
60A
1ns
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
5Ω
15Ω
25Ω
35Ω
45Ω
1 ns
10 ns
100 ns
1000 ns
t
f
t
r
t
d(off)
t
d(on)
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, RG=15Ω,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, IC=40A,
Dynamic test circuit in Figure E)
0°C
50°C
100°C
150°C
10ns
100ns
t
r
t
f
t
d(on)
t
d(off)
-50°C
0°C
50°C
100°C
150°C
0V
1V
2V
3V
4V
5V
6V
7V
min.
typ.
max.
TJ, JUNCTION TEMPERATURE
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=40A, RG=15Ω,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 1.5mA)
 8 page
background image
IKW40T120
^
TrenchStop Series
Power Semiconductors
8
Preliminary / Rev. 1 Jul-02
10A
20A
30A
40A
50A
60A
70A
0,0mJ
5,0mJ
10,0mJ
15,0mJ
20,0mJ
25,0mJ
E
ts*
E
off
*) E
on and Etsinclude losses
due to diode recovery
E
on*
5Ω
15Ω
25Ω
35Ω
0 mJ
5 mJ
10 mJ
15 mJ
E
ts*
E
on*
*) E
on and Ets include losses
due to diode recovery
E
off
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, RG=15Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, IC=40A,
Dynamic test circuit in Figure E)
50°C
100°C
150°C
0mJ
5mJ
10mJ
15mJ
E
ts*
E
on*
*) E
on and Ets include losses
due to diode recovery
E
off
400V
500V
600V
700V
800V
0mJ
5mJ
10mJ
15mJ
E
ts*
E
on*
*) E
on and Ets include losses
due to diode recovery
E
off
TJ, JUNCTION TEMPERATURE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=40A, RG=15Ω,
Dynamic test circuit in Figure E)
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ=150°C,
VGE=0/15V, IC=40A, RG=15Ω,
Dynamic test circuit in Figure E)
 9 page
background image
IKW40T120
^
TrenchStop Series
Power Semiconductors
9
Preliminary / Rev. 1 Jul-02
0nC
50nC
100nC
150nC
200nC
250nC
0V
5V
10V
15V
960V
240V
0V
10V
20V
10pF
100pF
1nF
C
rss
C
oss
C
iss
QGE, GATE CHARGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge
(IC=40 A)
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
12V
14V
16V
0µs
5µs
10µs
15µs
12V
14V
16V
18V
0A
100A
200A
300A
VGE, GATE-EMITTETR VOLTAGE
VGE, GATE-EMITTETR VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C)
Figure 20. Typical short circuit collector
current as a function of gate-
emitter voltage
(VCE ≤ 600V, Tj ≤ 150°C)
 10 page
background image
IKW40T120
^
TrenchStop Series
Power Semiconductors
10
Preliminary / Rev. 1 Jul-02
0V
200V
400V
600V
0A
20A
40A
60A
1.5us
1us
0.5us
0us
I
C
V
CE
0V
200V
400V
600V
0A
20A
40A
60A
1.5us
1us
0.5us
0us
I
C
V
CE
t
, TIME
t
, TIME
Figure 21. Typical turn on behavior
(VGE=0/15V, RG=15Ω, Tj = 150°C,
Dynamic test circuit in Figure E)
Figure 22. Typical turn off behavior
(VGE=15/0V, RG=15Ω, Tj = 150°C,
Dynamic test circuit in Figure E)
10µs
100µs
1ms
10ms
100ms
10
-3K/W
10
-2K/W
10
-1K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D
=0.5
10µs
100µs
1ms
10ms
100ms
10
-3K/W
10
-2K/W
10
-1K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D
=0.5
tP, PULSE WIDTH
tP, PULSE WIDTH
Figure 23. IGBT transient thermal resistance
(D = tp / T)
Figure 24. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
R
,( K/ W )
τ , (s ) =
0.159
1.10*10
-1
0.133
1.56*10
-2
0.120
1.35*10
-3
0.038
1.51*10
-4
C 1 =
τ1/R1
R 1
R 2
C 2 =
τ2/R2
R
,( K/ W )
τ , (s ) =
0.228
1.01*10
-1
0.257
1.15*10
-2
0.238
1.30*10
-3
0.087
1.53*10
-4
C 1 =
τ1/R1
R 1
R 2
C 2 =
τ2/R2




Html 페이지

1  2  3  4  5  6  7  8  9  10  11  12  13  14  15 


데이터시트



관련 부품명

부품명상세내용Html View제조사
IKP10N60TLow Loss DuoPack : IGBT in Trench and Fieldstop technology with soft fast recovery anti-parallel EmCon HE diode 1 2 3 4 5 MoreInfineon Technologies AG
IHP10T120Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft fast recovery anti-parallel EmCon HE diode 1 2 3 4 5 MoreInfineon Technologies AG
IKB06N60TLow Loss DuoPack : IGBT in Trench and Fieldstop technology with soft fast recovery anti-parallel EmCon HE diode 1 2 3 4 5 MoreList of Unclassifed Manufacturers
IKP06N60TLow Loss DuoPack : IGBT in Trench and Fieldstop technology with soft fast recovery anti-parallel EmCon HE diode 1 2 3 4 5 MoreInfineon Technologies AG
IKP15N60TLow Loss DuoPack : IGBT in Trench and Fieldstop technology with soft fast recovery anti-parallel EmCon HE diode 1 2 3 4 5 MoreInfineon Technologies AG
IKW30N60TLow Loss DuoPack : IGBT in Trench and Fieldstop technology with soft fast recovery anti-parallel EmCon HE diode 1 2 3 4 5 MoreInfineon Technologies AG
IKW75N60TLow Loss DuoPack : IGBT in Trench and Fieldstop technology with soft fast recovery anti-parallel EmCon HE diode 1 2 3 4 5 MoreInfineon Technologies AG
IKW15T120LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT FAST RECOVERY ANTI-PARALLEL EMCON HE DIODE 1 2 3 4 5 MoreInfineon Technologies AG
IKP04N60TLow Loss DuoPack : IGBT in Trench and Fieldstop technology with soft fast recovery anti-parallel EmCon HE diode 1 2 3 4 5 MoreInfineon Technologies AG
IKW50N60TLow Loss DuoPack : IGBT in Trench and Fieldstop technology with soft fast recovery anti-parallel EmCon HE diode 1 2 3 4 5 MoreInfineon Technologies AG

링크 URL

ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ]  

Alldatasheet는?   |   광고문의    |   운영자에게 연락하기   |   개인정보취급방침   |   즐겨찾기   |   링크교환   |   제조사별 검색
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl