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AFBR-S4N44C013 데이터시트(Datasheet) 1 Page - Broadcom Corporation.

부품명 AFBR-S4N44C013
상세내용  4x4 NUV-HD Silicon Photo Multiplier Array
PDF  7 Pages
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제조사  BOARDCOM [Broadcom Corporation.]
홈페이지  http://www.broadcom.com
Logo 

   
 1 page
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Data Sheet
Broadcom
AFBR-S4N44C103-DS101
October 29, 2018
Description
The Broadcom® AFBR-S4N44C013 is a silicon photo
multiplier (SiPM) array used for ultra-sensitive precision
measurement of single photons.The active area is 3.72 ×
3.72 mm2. High packing density of the single chip is
achieved using through-silicon-via (TSV) technology. Larger
areas can be covered by tiling multiple AFBR-S4N44C013
arrays almost without any edge losses. The passivation
layer is made by a glass highly transparent down to UV
wavelengths, resulting in a broad response in the visible
light spectrum with high sensitivity towards blue- and
near-UV region of the light spectrum. The SiPM is best
suited for the detection of low-level pulsed light sources,
especially for detection of Cherenkov- or scintillation light
from the most common organic (plastic) and inorganic
scintillator materials (for example, LSO, LYSO, BGO, NaI,
CsI, BaF, LaBr). This product is lead free and compliant with
RoHS and REACH.
Block Diagram
Figure 1: AFBR-S4N44C013 Block Diagram
Features
High PDE of more than 55% at 420 nm
High fill factors
Excellent SPTR and CRT
Excellent uniformity of breakdown voltage, 180 mV
(3 sigma)
Excellent uniformity of gain
With TSV technology (4-side tilable)
Size 3.88 × 3.88 mm2
Cell pitch 30 × 30 µm2
Highly transparent glass protection layer
Operating temperature range from –20°C to +50°C
RoHS and REACH compliant
Applications
X-ray and gamma ray detection
Gamma ray spectroscopy
Safety and security
Nuclear medicine
Positron emission tomography
Life sciences
Flow cytometry
Fluorescence – luminescence measurements
Time correlated single photon counting
High energy physics
Astrophysics
AFBR-S4N44C013
4×4 NUV-HD Silicon Photo Multiplier Array
 2 page
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Broadcom
AFBR-S4N44C103-DS101
2
AFBR-S4N44C013 Data Sheet
4×4 NUV-HD Silicon Photo Multiplier Array
Pad Layout and Soldering Ball Geometry
Figure 2: Bottom View (Left) and Cross Sections (Right)
Reflow Soldering Diagram
Figure 3: Recommended Reflow Soldering Profile
D-D
D
D
0.49
0.3
0.6
Glass surface
Sensor surface
0.97
0.97
0.97
Pin 1
Back Side
NOTES:
1) Dimensions areinmillimeters.
2) Nominal values rounded to two decimal places - Suppression of following zeros.
A
A
C
C
3) A is anode, C is cathode.
soak
[s]
[°C]
0
50
100
150
200
250
300
0
50
100
150
200
250
300
350
400
max 245 °C
90...120s
< 1 K/s
217 °C liquidus
reflow
pre-heat
[s]
[°C]
0
50
100
150
200
250
300
0
50
100
150
200
250
300
350
400
soak
max 245 °C
90...120s
< 1 K/s
q
217 °C liquidus
reflow
pre-heat
 3 page
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Broadcom
AFBR-S4N44C103-DS101
3
AFBR-S4N44C013 Data Sheet
4×4 NUV-HD Silicon Photo Multiplier Array
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause damage to the devices. Limits apply to each parameter in
isolation. Absolute maximum ratings are those values beyond which damage to the device may occur if these limits are
exceeded for other than a short period of time.
Device Specification
Features measured at 25°C unless otherwise specified.
Geometric Features
Parameter
Symbol
Min.
Max.
Units
Storage Temperature
TSTG
–20
+60
°C
Operating Temperature
TA
–20
+50
°C
Soldering Temperaturea, b
a. The AFBR-S4N44C013 is reflow-solderable according to solder diagram as shown in Figure 3.
b. According to JEDEC J-STD-020D, the moisture sensitivity classification is MSL3.
TSOLD
—245
°C
Lead Soldering Timea, b
tSOLD
—60
s
Electrostatic Discharge Voltage Capability HBM
ESDHBM
—2
kV
Electrostatic Discharge Voltage Capability CDM
ESDCDM
—500
V
Operating Over Voltage
VOV
—10
V
Parameter
Symbol
Value
Units
Device Area
DA
3.88 × 3.88
mm2
Active Area
AA
3.72 × 3.72
mm2
Micro Cell Pitch
Lcell
30
µm
Number of Micro Cells
Ncells
15060
Micro Cell Fill Factor
FF
76
%
 4 page
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Broadcom
AFBR-S4N44C103-DS101
4
AFBR-S4N44C013 Data Sheet
4×4 NUV-HD Silicon Photo Multiplier Array
Optical and Electrical Features
Parameters have been measured for two recommended working points: Typical for general purpose applications and
Performance
for best timing performance.
Parameter
Symbol
Min.
Typ.
Max.
Units
Reference Plots
Spectral Range
300
900
nm
Peak Sensitivity Wavelength
PK
—420
nm
Figure 4
Breakdown Voltage
VBD
—26.9—
V
Figure 6
Temperature Coefficient of Breakdown Voltage
VBR/T—
26
mV/K
Parameter
Symbol
Typ.a
a. Typical values are measured at 3V above breakdown; performance at 7V above breakdown.
Perf.a
Units
Reference Plots
Photo Detection Efficiencyb
b. Measured at peak sensitivity-wavelength. Measurement does not include correlated noise, such as afterpulsing or
optical crosstalk.
PDE
43
55
%
Figure 5
Dark Current
ID
0.5
3.4
µA
Figure 6
Dark Count Ratec
c. Measured at 0.5 p.e. amplitude. Measurement does not include delayed correlated events.
DCR
1.7
3.7
Mcps
Figure 7, Figure 10
Dark Count Rate Per Unit Area
DCRmm²
120
270
kcps/mm²
Gain
G
1.6
3.3
×106
Figure 8, Figure 11
Optical Crosstalk
PXtalk
929
%
Figure 9, Figure 12
Afterpulsing Probability
PAP
<1
1
%
Figure 9, Figure 12
Recharge Time Constantd
d. Measured on 1 × 1 mm2 devices with an input impedance of 20Ω.
fall
55
50
ns
Figure 13
Nominal Terminal Capacitancee
e. Measured using input sine wave with f = 200 kHz and Vin = 500 mV.
CT
990
760
pF
Temperature Coefficient of Gain
G/T1.1
1.0
×104/K
 5 page
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Broadcom
AFBR-S4N44C103-DS101
5
AFBR-S4N44C013 Data Sheet
4×4 NUV-HD Silicon Photo Multiplier Array
Reference Plots
Features measured at 25°C unless otherwise specified.
Figure 4: Spectral Sensitivity
Figure 5: PDE at Peak
 vs. OV
Figure 6: Typical Reverse IV Curve
Figure 7: Dark Count Rate vs. OV
 6 page
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Broadcom
AFBR-S4N44C103-DS101
6
AFBR-S4N44C013 Data Sheet
4×4 NUV-HD Silicon Photo Multiplier Array
Figure 8: Gain vs.OV
Figure 9: Correlated Noise vs. OV
Figure 10: Dark Count Rate vs. PDE at Peak
Figure 11: Gain vs. PDE at Peak
Figure 12: Correlated Noise vs. PDE at Peak
Figure 13: Example Signal Measured at 3V OV
(input impedance 20Ω,
gain 2V/mA)
 7 page
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Broadcom, the pulse logo, Connecting everything, Avago Technologies, Avago, and the A logo are among the trademarks
of Broadcom and/or its affiliates in the United States, certain other countries, and/or the EU.
Copyright © 2018 Broadcom. All Rights Reserved.
The term “Broadcom” refers to Broadcom Inc. and/or its subsidiaries. For more information, please visit www.broadcom.com.
Broadcom reserves the right to make changes without further notice to any products or data herein to improve reliability,
function, or design. Information furnished by Broadcom is believed to be accurate and reliable. However, Broadcom does
not assume any liability arising out of the application or use of this information, nor the application or use of any product or
circuit described herein, neither does it convey any license under its patent rights nor the rights of others.




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