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IRF1310NS 데이터시트(Datasheet) 1 Page - Inchange Semiconductor Company Limited

부품명 IRF1310NS
상세내용  Isc N-Channel MOSFET Transistor
PDF  2 Pages
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제조사  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
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 1 page
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isc website:www.iscsemi.cn
isc & iscsemi is registered trademark
1
Isc N-Channel MOSFET Transistor
IRF1310NS
·
FEATURES
·
With To-263(D2PAK) package
·
Low input capacitance and gate charge
·
Low gate input resistance
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
APPLICATIONS
·
Switching applications
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100
V
VGSS
Gate-Source Voltage
±
20
V
ID
Drain Current-ContinuousTc=25℃
Tc=100℃
42
30
A
IDM
Drain Current-Single Pulsed
140
A
PD
Total Dissipation @TC=25℃
160
W
Tch
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(ch-c)
Channel-to-case thermal resistance
0.95
/W
Rth(ch-a)
Channel-to-ambient thermal resistance
40
/W
 2 page
background image
isc website:www.iscsemi.cn
isc & iscsemi is registered trademark
2
Isc N-Channel MOSFET Transistor
IRF1310NS
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
100
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=0.25mA
2.0
4.0
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=22A
36
IGSS
Gate-Source Leakage Current
VGS= ±20V;VDS= 0V
±
0.1
μ
A
IDSS
Drain-Source Leakage Current
VDS=100V; VGS= 0V;Tj=25℃
VDS=80V; VGS= 0V;Tj=125℃
25
250
μ
A
VSDF
Diode forward voltage
ISD=22A, VGS = 0 V
1.3
V




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