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NKSD800-100 데이터시트(Datasheet) 1 Page - Nell Semiconductor Co., Ltd

부품명 NKSD800-100
상세내용  Schottky Rectifier
PDF  6 Pages
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제조사  NELLSEMI [Nell Semiconductor Co., Ltd]
홈페이지  http://www.nellsemi.com
Logo 

   
 1 page
background image
NKSD800-100 Series RoHS
RoHS
Schottky Rectifier
www.nellsemi.com
Page 1 of 6
FEATURES
175°C T operation
J
Center tap module
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and
long term reliability
Lead (Pb)-free
Designed and qualified for industrial level
TYPICAL APPLICATIONS
High current switching power supplies
Plating power supplies
UPS system
Converters
Freewheeling
Welder
Reverse battery protection.
The NKSD800... Schottky rectifier common
cathode module series has been optimized
for low reverse leakage at high temperature.
The proprietary barrier technology allows for
reliable operation up to 175 °C junction
temperature.
DESCRIPTION
IAP (insulated)
IAP (non-insulated)
Base
Lug
terminal
anode 1
Lug
terminal
anode 2
common cathode
Lug
terminal
anode 1
Lug
terminal
anode 2
Lug terminal
common cathode
*Add suffix ”R” for common anode
MAJOR RATINGS AND CHARACTERISTICS
UNIT
lFSM
IF(AV)
A
CHARACTERISTICS
Rectangular waveform
A
t
5 µs sine
p =
400 Apk, T = 125°C (per leg)
j
Range
SYMBOL
VALUES
800
100
46000
0.70
-55 to 175
ºC
VRRM
TJ
VF
V
V
VOLTAGE RATINGS
UNIT
VR
PARAMETER
Maximum DC reverse voltage
SYMBOL
NKSD800-100
100
VRWM
V
Maximum working peak reverse voltage
PRODUCT SUMMARY
VR
100 V
lF(AV)
Nell High Power Products
NKSD800-100
NKSD800-100I
Lug terminal
cathode 1
Lug terminal
common anode
Lug terminal
cathode 2
NKSD800-100RI
*Add suffix “I” for insulated type
800A (400AX2)
Base
Lug
terminal
cathode 1
Lug
terminal
cathode 2
common anode
NKSD800-100R
*Add suffix ”R” for common anode
800A/100V (400A x 2/100V)
 2 page
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ABSOLUTE MAXIMUM RATINGS
UNIT
lFSM
IF(AV)
A
SYMBOL
Maximum average forward
current
See fig.5
A
Non- repetitive avalanche energy per leg
PARAMETER
TEST CONDITIONS
400
800
46000
6000
40
mJ
lAR
EAS
VALUES
per leg
per device
50% duty cycle at T = 120°C, rectangular waveform
C
2
Maximum peak one cycle non-repetitive
surge current per leg
See fig.7
Repetitive avalanche current per leg
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
V
applied
RRM
T =25°C, l
=20A, L=0.2mH
J
AS
Current decaying linearly to zero in 1 µs
Frequency limited by T maximum V =1.5xV typical
J
A
R
ELECTRICAL SPECIFICATIONS
UNIT
(1)
VFM
V
SYMBOL
Maximum forward voltage drop per leg
See fig.1
PARAMETER
TEST CONDITIONS
0.80
1.05
0.70
0.90
100
mA
(1)
lRM
VALUES
50
pF
nH
V/µs
12000
3
10000
400A
800A
400A
800A
Maximum reverse leakage current per leg
See fig.2
T = 25°C
J
T = 125°C
J
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
CT
LS
dV/dt
Rated VR
From top of terminal hole to mounting plane
V = 5 V
(test signal range 100 kHz to 1 MH
Z) 25°C
R
DC
T = 25°C
J
T = 125°C
J
V = Rated V
R
R
Note
(1) Pulse width < 300 µs, duty cycle < 2%
THERMAL-MECHANICAL SPECIFICATIONS
UNIT
SYMBOL
Maximum junction and storage temperature range
PARAMETER
lbf ∙ in
Thermal resistance, junction to case per leg
Thermal resistance, junction to case
per module
Thermal resistance, case to heatsink
Weight
IAP (non-insulated)
IAP (insulated)
T ,T
J
Stg
RthJC
RthCS
MIN.
TYP.
MAX.
lbf ∙ in
(N∙m)
g(oz.)
ºC
ºC/W
175
0.12
0.060
-
-
-
53.1 (6)
53.1 (6)
80
35
-
-
-
155 (5.47)
145 (5.11)
0.08
-
-
-
-55
-
-
-
-
-
44.2 (5)
44.2 (5)
-
-
Mounting torque, M6
Terminal torque, M6
vertical pull
2" lever pull
-
www.nellsemi.com
Page 2 of 6
V
2500 (1min)
Maximum RMS insulation voltage
(for insulated type)
VINS
TO-244 (non-insulated)
TO-244 (insulated)
-
-
0.16
INT-A-PAK
JEDEC
Case style
TO-244 (non-insulated)
TO-244 (insulated)
0.080
-
-
RthJC
μA
NKSD800-100 Series RoHS
RoHS
Nell High Power Products
 3 page
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Fig.1 Typical forward voltage drop
characteristics (Per Leg)
Forward voltage drop, V
(V)
FM
Reverse voltage, V (V)
R
Fig.2 Typical values of reverse current vs.
Reverse voltage (Per Leg)
Fig.3-1 Maximum thermal impedance R
characteristics
th(j-c)
(Per Leg, for non-insulated)
Rectangular pulse duration,t (s)
1
T =
J
175ºC
10000
1000
100
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1000
100
10
1
0.1
0.01
0.001
0
20
40
60
80
100
T = 17
J
5ºC
T = 1
J
50ºC
T = 125
J
ºC
T = 100
J
ºC
T = 7
J
5ºC
T = 2
J
5ºC
T =
J
50ºC
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
D = 0.75
D = 0.50
D= 0.33
D = 0.25
D =0.20
Single pulse
(thermal resistance)
www.nellsemi.com
Page 3 of 6
1
NK
2
S
D
800
100
-
R
3
4
5
6
1
2
-
3
-
4
-
-
Device code
-
5
7
-
Nell's power module
S for Schottky Barrier Diode
D for Dual Diodes, IAP Package
Maximum average forward current, A
Voltage rating (100 = 100V)
None for non-insulated type
"
I" for insulated type
I
7
6
- None for common cathode configuration
common anode configuration
"R" for
Ordering Information Table
1.4
T =
J
25ºC
NKSD800-100 Series RoHS
RoHS
Nell High Power Products
 4 page
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www.nellsemi.com
Page 4 of 6
Fig.3-2 Maximum thermal impedance R
characteristics
th(j-c)
(Per Leg, for insulated)
Rectangular pulse duration,t (s)
1
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
D =0.2
D = 0.5
D= 0.33
D = 0.25
Single pulse
(thermal resistance)
Fig.4 Typical junction capacitance vs.
Reverse voltage (Per Leg )
Fig.5 Maximum allowable case temperature
vs. Average forward current (Per Leg)
Fig.6 Forward power loss characteristics
(Per Leg)
Fig.7 Maximum non-repetitive surge current
(Per Leg)
D = 0.75
NKSD800-100 Series RoHS
RoHS
Nell High Power Products
Reverse voltage, V (V)
R
Average forward current, l
(A)
F(AV)
180
160
140
120
100
80
0
100
200
600
300
400
10000
1000
0
10
20
30
40
50
60
70
80
90 100
T =
J
25ºC
100000
500
Square wave (D = 0.50)
80% rated V applied
r
See note (1)
DC
Cycles @ 50Hz
10000
5000
0
1
100
10
At any rated load condition
and with rated V
applied
RRM
following surge
Average forward current, l
(A)
F(AV)
400
150
100
50
0
0
100
200
500
200
250
300
400
300
350
600
DC
RMS limit
D=0.08
D=0.17
D=0.25
D=0.33
D=0.50
 5 page
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+
Fig.8 Unclamped lnductive test circuit
L
IRFP460
R = 25Ω
g
D.U.T.
Current
Freewheel
High-speed
V = 25V
d
switch
diode
monitor
www.nellsemi.com
Page 5 of 6
Note
(1) Formula used:T = T - (Pd+Pd
) x R
;
C
J
REV
thJC
Pd
= lnverse power loss = V
x l (1-D); l at V
= 80% rated V
REV
R1
R
R
R1
R
Pd = Forward power loss = l
x V
at(l
/D)(see fig.6)
F(AV)
FM
F(AV)
IAP (Non-Insulated)
2-Φ6.5
94.0
46.0
80.0
18.0
2-M6 Screw
1
2
3
24.0
All dimensions in millimeters
NKSD800-100 Series RoHS
RoHS
Nell High Power Products
 6 page
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www.nellsemi.com
Page 6 of 6
IAP (Insulated)
2-Φ6.5
94.0
46.0
80.0
3-M6 Screw
1
2
3
24.0
18.0
All dimensions in millimeters
NKSD800-100 Series RoHS
RoHS
Nell High Power Products




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