전자부품 데이터시트 검색엔진
Selected language     Korean  ▼
부품명
         상세내용
Preview PDF Download HTML-1page HTML-10pages

NST320S100C 데이터시트(Datasheet) 1 Page - Nell Semiconductor Co., Ltd

부품명 NST320S100C
상세내용  High Performance Schottky Rectifie
PDF  5 Pages
Scroll/Zoom Zoom In 100% Zoom Out
제조사  NELLSEMI [Nell Semiconductor Co., Ltd]
홈페이지  http://www.nellsemi.com
Logo 

   
 1 page
background image
SEMICONDUCTOR
NST320S100C Series RoHS
RoHS
FEATURES
PRODUCT SUMMARY
VR
320A
100V
High Performance Schottky Rectifier
175°C T operation
J
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and
long term reliability
Lead (Pb)-free
Designed and qualified for industrial level
SOT-227 ( Non-insulated)
MAJOR RATINGS AND CHARACTERISTICS
UNIT
lFSM
IF(AV)
A
CHARACTERISTICS
Rectangular waveform
A
tp = 5 µs sine
160 Apk, T = 125°C
J
Range
SYMBOL
VALUES
160 x 2
100
12000
0.80
-55 to 175
ºC
VRRM
TJ
VF
V
V
VOLTAGE RATINGS
UNIT
VR
PARAMETER
Maximum DC reverse voltage
SYMBOL
NST320S100C
100
VRWM
V
Maximum working peak reverse voltage
lF(AV)
www.nellsemi.com
Page 1 of 5
TYPICAL APPLICATIONS
High current switching power supplies
Plating power supplies
UPS system
Converters
Freewheeling diode
Welder
Reverse battery protection.
The NST320S100C Schottky rectifier module
series has been optimized for low reverse
leakage at high temperature.
The proprietary barrier technology allows
for reliable operation up to 175 °C junction
temperature.
DESCRIPTION
Nell High Power Products
320A/100V
Anode 2
Common
cathode
Anode 1
Anode 1
Anode 2
Base Plate
Common Cathode
International standard package SOT-227
Low I
values
RM
 2 page
background image
ABSOLUTE MAXIMUM RATINGS
UNIT
lFSM
IF(AV)
A
SYMBOL
Maximum average forward current
per leg
A
Non- repetitive avalanche energy
PARAMETER
TEST CONDITIONS
160
12000
1400
11.3
mJ
lAR
EAS
VALUES
50% duty cycle at T = 100°C, rectangular waveform
C
1.5
Maximum peak one cycle non-repetitive
surge current
Repetitive avalanche current
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
V
applied
RRM
T =25°C, l
J
=15A, L=100μH
AS
Current decaying linearly to zero in 1 µs
f = 10 KHz, V =1.5xV typical
A
R
ELECTRICAL SPECIFICATIONS
UNIT
(1)
VFM
V
SYMBOL
Maximum forward voltage drop per leg
PARAMETER
TEST CONDITIONS
0.98
1.21
0.80
1.05
2
mA
(1)
lRM
VALUES
30
pF
nH
V/µs
2500
6.0
10000
160A
320A
160A
320A
Maximum reverse leakage current per leg
T = 25°C
J
T = 125°C
J
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
CT
LS
dV/dt
Rated VR
From top of terminal hole to mounting plane
V = 5 V
(test signal range 100 kHz to 1 MH
Z) 25°C
R
DC
T = 25°C
J
T = 125°C
J
V = Rated V
R
R
Note
(1) Pulse width < 500 µs, duty cycle < 2%
THERMAL-MECHANICAL SPECIFICATIONS
UNIT
SYMBOL
Maximum junction and storage temperature range
PARAMETER
Thermal resistance, junction to case
Thermal resistance, case to heatsink
Weight
T ,T
J
Stg
RthJC
RthCS
MIN.
TYP.
MAX.
g(oz.)
ºC
ºC/W
175
0.30
-
-
30 (1.06)
-
-55
-
-
Mounting torque, ± 10%
to heatsink, M4
-
www.nellsemi.com
Page 2 of 5
SEMICONDUCTOR
RoHS
RoHS
-
-
JEDEC SOT-227 module (Non-insulated)
Case style
Nell High Power Products
0.15
-
Nm (lbf in)
1.1 (9.7)
1.1 (9.7)
NST320S100C Series
-
-
busbar, M4
 3 page
background image
Ordering Information Tabel
1
N
2
ST
320
100
3
1
2
-
3
-
-
Device code
-
4
Nell's high power module
Package indicator, “ST” for SOT-227
Maximum average forward current, 320 = 160A x 2
S = Schottky family
Fig.1 Maximum forward voltage drop
characteristics
Forward voltage drop, V
(V)
FM
Reverse voltage, V (V)
R
Fig.2 Typical values of reverse current vs.
reverse voltage
Fig.3 Maximum thermal impedance R
characteristics
th(j-c)
Rectangular pulse duration,t (s)
1
400
10
0.0
0.2
0.4
0.8
100
10
1
0.1
0.001
0
20
40
60
80
0.4
0.1
0.01
0.001
10
www.nellsemi.com
Page 3 of 5
SEMICONDUCTOR
RoHS
RoHS
0.6
100
Nell High Power Products
5
1
0.01
0.1
1s
0.01
1.0
NST320S100C Series
S
4
C
6
5
-
-
6
Voltage rating (100 = 100V)
Circuit configuration, Center tap common cathode,
non-insulated
T = 150
J
ºC
T = 12
J
5ºC
T = 2
J
5ºC
1.2
100
D=t /T
p
tp
T
(thermal resistance)
Single pulse
D = 0.5
D = 0.33
D = 0.25
D = 0.17
D = 0.08
T = 150
J
ºC
T = 125
J
ºC
T = 100
J
ºC
T = 75
J
ºC
T = 50
J
ºC
T = 25
J
ºC
 4 page
background image
SEMICONDUCTOR
RoHS
RoHS
www.nellsemi.com
Page 4 of 5
Fig.4 Typical junction capacitance vs.
reverse voltage
Fig.5 Maximum allowable case temperature
vs. Average forward current
Fig.6 Forward power loss characteristics
Reverse voltage, V (V)
R
Average forward current, l
(A)
F(AV)
Average forward current, l
(A)
F(AV)
10000
0
20
40
180
160
150
140
0
40
80
120
160
25
0
50
100
150
100
0
130
200
125
50
100
150
Nell High Power Products
120
110
100
+
Fig.7 Unclamped lnductive test circuit
L
IRF460B
R = 25Ω
g
D.U.T.
Current
Freewheel
High-speed
V = 25V
d
switch
diode
monitor
Note
(1) Formula used:T = T - (Pd+Pd
) x R
;
C
J
REV
thJC
Pd
= lnverse power loss = V
x l (1-D); l at V
= rated V
REV
R1
R
R
R1
R
Pd = Forward power loss = l
x V
at (l
/D)(see fig.6)
F(AV)
FM
F(AV)
40HFL40S02
1000
60
80
100
170
280
DC
Square wave (D = 0.50)
80% rated V applied
r
See note (1)
75
(40FD04A)
240
225
200
250
RMS limit
200
DC
120°
180°
30°
60°
90°
NST320S100C Series
T =
J
25ºC
90
80
250
 5 page
background image
www.nellsemi.com
Page 5 of 5
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
NST320S100C Series
SOT-227
All dimensions in millimeters (inches)
Notes
• Dimensioning and toleranc ing per ANSI Y14.5M-1982
• Controlling dimension: millimeter
38.30 (1.508)
37.80 (1.488)
-A-
4
1
3
12.50 (0.492)
7.50 (0.295)
Ø 4.40 (0.173)
Ø 4.20 (0.165)
30.20 (1.189)
29.80 (1.173)
15.00 (0.590)
6.25 (0.246)
25.70 (1.012)
25.20 (0.992)
-B-
R full
Chamfer
2.00 (0.079) x 45
2.10 (0.082)
1.90 (0.075)
8.10 (0.319)
7.70 (0.303)
4 x
2.10 (0.082)
1.90 (0.075)
-C-
0.12 (0.005)
12.30 (0.484)
11.80 (0.464)
M
M
M
0.25 (0.010)
C A
B
4 x M4 nuts
2




Html 페이지

1  2  3  4  5 


데이터시트




링크 URL

ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ]  

Alldatasheet는?   |   광고문의    |   운영자에게 연락하기   |   개인정보취급방침   |   즐겨찾기   |   링크교환   |   제조사별 검색
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl