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IKP04N60T 데이터시트(Datasheet) 7 Page - Infineon Technologies AG

부품명 IKP04N60T
상세내용  Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
PDF  13 Pages
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제조사  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
Logo 

 2 page
background image
IKP04N60T
TrenchStop Series
q
Power Semiconductors
2
Rev. 2.2 Dec-04
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
RthJC
TO-220-3-1
3.5
Diode thermal resistance,
junction – case
RthJCD
TO-220-3-1
5
Thermal resistance,
junction – ambient
RthJA
TO-220-3-1
62
K/W
Electrical Characteristic, at Tj = 25
°C, unless otherwise specified
Value
Parameter
Symbol
Conditions
min.
Typ.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
V(BR)CES VGE=0V, IC=0.2mA
600
-
-
Collector-emitter saturation voltage
VCE(sat)
VGE = 15V, IC=4A
Tj=25
°C
Tj=175
°C
-
-
1.5
1.9
2.05
-
Diode forward voltage
VF
VGE=0V, IF=4A
Tj=25
°C
Tj=175
°C
-
-
1.65
1.6
2.05
-
Gate-emitter threshold voltage
VGE(th)
IC= 60µA,VCE=VGE
4.1
4.9
5.7
V
Zero gate voltage collector current
ICES
VCE=600V,
VGE=0V
Tj=25
°C
Tj=175
°C
-
-
-
-
40
1000
µA
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
100
nA
Transconductance
gfs
VCE=20V, IC=4A
-
2.2
-
S
Integrated gate resistor
RGint
-
Dynamic Characteristic
Input capacitance
Ciss
-
252
-
Output capacitance
Coss
-
20
-
Reverse transfer capacitance
Crss
VCE=25V,
VGE=0V,
f=1MHz
-
7.5
-
pF
Gate charge
QGate
VCC=480V, IC=4A
VGE=15V
-
27
-
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
LE
TO-220-3-1
-
7
-
nH
Short circuit collector current
1)
IC(SC)
VGE=15V,tSC
≤5µs
VCC = 400V,
Tj
≤ 150°C
-
36
-
A
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
 3 page
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IKP04N60T
TrenchStop Series
q
Power Semiconductors
3
Rev. 2.2 Dec-04
Switching Characteristic, Inductive Load, at Tj=25
°C
Value
Parameter
Symbol
Conditions
min.
Typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
td(on)
-
14
-
Rise time
tr
-
7
-
Turn-off delay time
td(off)
-
164
-
Fall time
tf
-
43
-
ns
Turn-on energy
Eon
-
61
-
Turn-off energy
Eoff
-
84
-
Total switching energy
Ets
Tj=25
°C,
VCC=400V,IC=4A,
VGE=0/15V,
RG= 47
Ω,
Lσ
1) =150nH,
Cσ
1) =47pF
Energy losses include
“tail” and diode
reverse recovery.
-
145
-
µJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
-
28
-
ns
Diode reverse recovery charge
Qrr
-
79
-
nC
Diode peak reverse recovery current
Irrm
-
5.3
-
A
Diode peak rate of fall of reverse
recovery current during tb
dirr/dt
Tj=25
°C,
VR=400V, IF=4A,
diF/dt=610A/
µs
-
346
-
A/
µs
Switching Characteristic, Inductive Load, at Tj=175
°C
Value
Parameter
Symbol
Conditions
min.
Typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
td(on)
-
14
-
Rise time
tr
-
10
-
Turn-off delay time
td(off)
-
185
-
Fall time
tf
-
83
-
ns
Turn-on energy
Eon
-
99
-
Turn-off energy
Eoff
-
97
-
Total switching energy
Ets
Tj=175
°C,
VCC=400V,IC=4A,
VGE=0/15V,
RG= 47
Lσ
1) =150nH,
Cσ
1) =47pF
Energy losses include
“tail” and diode
reverse recovery.
-
196
-
µJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
-
95
-
ns
Diode reverse recovery charge
Qrr
-
291
-
nC
Diode peak reverse recovery current
Irrm
-
6.6
-
A
Diode peak rate of fall of reverse
recovery current during tb
dirr/dt
Tj=175
°C
VR=400V, IF=4A,
diF/dt=610A/
µs
-
253
-
A/
µs
1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.
 4 page
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IKP04N60T
TrenchStop Series
q
Power Semiconductors
4
Rev. 2.2 Dec-04
10Hz
100Hz
1kHz
10kHz
100kHz
0A
2A
4A
6A
8A
10A
12A
T
C= 110°C
T
C=80°C
1V
10V
100V
1000V
0.1A
1A
10A
10µs
50µs
1ms
DC
t
p=2µs
10ms
f, SWITCHING FREQUENCY
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
(Tj
≤ 175°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 47
Ω)
Figure 2. Safe operating area
(D = 0, TC = 25
°C, Tj ≤175°C;
VGE=15V)
25°C
50°C
75°C
100°C 125°C 150°C
0W
10W
20W
30W
40W
25°C
75°C
125°C
0A
2A
4A
6A
8A
TC, CASE TEMPERATURE
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(Tj
≤ 175°C)
Figure 4. Collector current as a function of
case temperature
(VGE
≥ 15V, Tj ≤ 175°C)
Ic
Ic
 5 page
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IKP04N60T
TrenchStop Series
q
Power Semiconductors
5
Rev. 2.2 Dec-04
0V
1V
2V
3V
0A
2A
4A
6A
8A
10A
15V
7V
9V
11V
13V
V
GE=2 0V
0V
1V
2V
3V
0A
2A
4A
6A
8A
10A
15V
7V
9V
11V
13V
V
GE=20 V
VCE, COLLECTOR-EMITTER VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
Figure 6. Typical output characteristic
(Tj = 175°C)
0V
2V
4V
6V
8V
0A
2A
4A
6A
8A
25°C
T
J=1 75°C
0°C
50°C
100°C
150°C
0.0V
0.5V
1.0V
1.5V
2.0V
2.5V
I
C=4 A
I
C=8 A
I
C=2 A
VGE, GATE-EMITTER VOLTAGE
TJ, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic
(VCE=20V)
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
 6 page
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IKP04N60T
TrenchStop Series
q
Power Semiconductors
6
Rev. 2.2 Dec-04
0A
2A
4A
6A
1ns
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
50Ω
100Ω
150Ω
200Ω
250Ω
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, RG = 47Ω,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175°C,
VCE= 400V, VGE = 0/15V, IC = 4A,
Dynamic test circuit in Figure E)
25°C
50°C
75°C
100°C 125°C 150°C
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
-50°C
0°C
50°C
100°C
150°C
0V
1V
2V
3V
4V
5V
6V
7V
min.
typ.
max.
TJ, JUNCTION TEMPERATURE
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 4A, RG=47Ω,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 60 µA)
 7 page
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IKP04N60T
TrenchStop Series
q
Power Semiconductors
7
Rev. 2.2 Dec-04
0A
2A
4A
6A
0.0m J
0.1m J
0.2m J
0.3m J
E
ts*
E
off
*) E
on a nd E tsin c lude lo sses
due to diode recovery
E
on*
25Ω 50Ω
100Ω
150Ω
200Ω
250Ω
0.0 mJ
0.1 mJ
0.2 mJ
0.3 mJ
0.4 mJ
E
ts*
E
on*
*) E
on and Ets include losses
due to diode recovery
E
off
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, RG = 47Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, IC = 4A,
Dynamic test circuit in Figure E)
25°C
50°C
75°C 100°C 125°C 150°C
0µJ
25µJ
50µJ
75µJ
100µJ
125µJ
150µJ
175µJ
E
ts*
E
on*
*) E
on an d E ts in clude lo sses
due to diode recovery
E
off
300V
350V
400V
450V
0.00m J
0.05m J
0.10m J
0.15m J
0.20m J
0.25m J
E
ts*
E
on*
*) E
on a nd E ts in clu de lo s s e s
due to diode recovery
E
off
TJ, JUNCTION TEMPERATURE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 4A, RG = 47Ω,
Dynamic test circuit in Figure E)
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 4A, RG = 47Ω,
Dynamic test circuit in Figure E)
 8 page
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IKP04N60T
TrenchStop Series
q
Power Semiconductors
8
Rev. 2.2 Dec-04
0nC
5nC 10nC 15nC 20nC 25nC 30nC
0V
5V
10V
15V
480V
120V
0V
10V 20V 30V 40V 50V 60V 70V
10pF
100pF
C
rss
C
oss
C
iss
QGE, GATE CHARGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge
(IC=4 A)
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
12V
14V
16V
18V
0A
10A
20A
30A
40A
50A
60A
10V
11V
12V
13V
14V
0µs
2µs
4µs
6µs
8µs
10µs
12µs
VGE, GATE-EMITTETR VOLTAGE
VGE, GATE-EMITETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-
emitter voltage
(VCE
≤ 400V, Tj ≤ 150°C)
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C,
TJmax<150°C)
 9 page
background image
IKP04N60T
TrenchStop Series
q
Power Semiconductors
9
Rev. 2.2 Dec-04
1µs10µs 100µs
1ms
10ms 100ms
10
-1K/W
10
0K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
1µs10µs100µs 1ms
10ms 100ms
10
-1K/W
10
0K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
tP, PULSE WIDTH
tP, PULSE WIDTH
Figure 21. IGBT transient thermal resistance
(D = tp / T)
Figure 22. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
400A/µs
600A/µs
0ns
40ns
80ns
120ns
160ns
200ns
240ns
280ns
T
J=25°C
T
J=175°C
400A/µs
600A/µs
0.00µC
0.05µC
0.10µC
0.15µC
0.20µC
0.25µC
0.30µC
0.35µC
T
J=25°C
T
J=175°C
diF/dt, DIODE CURRENT SLOPE
diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(VR=400V, IF=4A,
Dynamic test circuit in Figure E)
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(VR = 400V, IF = 4A,
Dynamic test circuit in Figure E)
R
,(K / W )
τ , (s )
0.38216
5.16*10
-2
0.68326
7.818*10
-3
1.49884
9*10
-4
0.93550
1.134*10
-4
C 1=
τ1/R1
R1
R2
C2=
τ2/R2
R
,( K/ W )
τ , (s )
0.29183
7.018*10
-2
6
0.79081
1.114*10
-2
1.86970
1.236*10
-3
2.04756
2.101*10
-4
C 1=
τ1/R1
R1
R2
C 2=
τ2/R2
 10 page
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IKP04N60T
TrenchStop Series
q
Power Semiconductors
10
Rev. 2.2 Dec-04
400A/µs
600A/µs
0A
2A
4A
6A
8A
10A
T
J=2 5 °C
T
J= 1 75°C
400A/µs
600A/µs
0A/µs
-100A/µs
-200A/µs
-300A/µs
T
J=25°C
T
J=175°C
diF/dt, DIODE CURRENT SLOPE
diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
(VR = 400V, IF = 4A,
Dynamic test circuit in Figure E)
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR=400V, IF=4A,
Dynamic test circuit in Figure E)
0V
1V
2V
0A
2A
4A
6A
8A
10A
175°C
T
J=25°C
0°C
50°C
100°C
150°C
0.0V
0.5V
1.0V
1.5V
2.0V
4A
I
F=8A
2A
VF, FORWARD VOLTAGE
TJ, JUNCTION TEMPERATURE
Figure 27. Typical diode forward current as
a function of forward voltage
Figure 28. Typical diode forward voltage as a
function of junction temperature
 11 page
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IKP04N60T
TrenchStop Series
q
Power Semiconductors
11
Rev. 2.2 Dec-04
Dimensions
symbol
[mm]
[inch]
min
max
min
max
A
9.70
10.30
0.3819
0.4055
B
14.88
15.95
0.5858
0.6280
C
0.65
0.86
0.0256
0.0339
D
3.55
3.7
0.1398
0.1457
E
2.60
3.00
0.1024
0.1181
F
6.00
6.80
0.2362
0.2677
G
13.00
14.00
0.5118
0.5512
H
4.35
4.75
0.1713
0.1870
K
0.38
0.65
0.0150
0.0256
L
0.95
1.32
0.0374
0.0520
M
2.54 typ.
0.1 typ.
N
4.30
4.50
0.1693
0.1772
P
1.17
1.40
0.0461
0.0551
T
2.30
2.72
0.0906
0.1071
TO-220AB




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