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IKP04N60T 데이터시트(Datasheet) 10 Page - Infineon Technologies AG

부품명 IKP04N60T
상세내용  Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
PDF  13 Pages
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제조사  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
Logo 

 
 4 page
background image
IKP04N60T
TrenchStop Series
q
Power Semiconductors
4
Rev. 2.2 Dec-04
10Hz
100Hz
1kHz
10kHz
100kHz
0A
2A
4A
6A
8A
10A
12A
T
C= 110°C
T
C=80°C
1V
10V
100V
1000V
0.1A
1A
10A
10µs
50µs
1ms
DC
t
p=2µs
10ms
f, SWITCHING FREQUENCY
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
(Tj
≤ 175°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 47
Ω)
Figure 2. Safe operating area
(D = 0, TC = 25
°C, Tj ≤175°C;
VGE=15V)
25°C
50°C
75°C
100°C 125°C 150°C
0W
10W
20W
30W
40W
25°C
75°C
125°C
0A
2A
4A
6A
8A
TC, CASE TEMPERATURE
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(Tj
≤ 175°C)
Figure 4. Collector current as a function of
case temperature
(VGE
≥ 15V, Tj ≤ 175°C)
Ic
Ic
 5 page
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IKP04N60T
TrenchStop Series
q
Power Semiconductors
5
Rev. 2.2 Dec-04
0V
1V
2V
3V
0A
2A
4A
6A
8A
10A
15V
7V
9V
11V
13V
V
GE=2 0V
0V
1V
2V
3V
0A
2A
4A
6A
8A
10A
15V
7V
9V
11V
13V
V
GE=20 V
VCE, COLLECTOR-EMITTER VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
Figure 6. Typical output characteristic
(Tj = 175°C)
0V
2V
4V
6V
8V
0A
2A
4A
6A
8A
25°C
T
J=1 75°C
0°C
50°C
100°C
150°C
0.0V
0.5V
1.0V
1.5V
2.0V
2.5V
I
C=4 A
I
C=8 A
I
C=2 A
VGE, GATE-EMITTER VOLTAGE
TJ, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic
(VCE=20V)
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
 6 page
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IKP04N60T
TrenchStop Series
q
Power Semiconductors
6
Rev. 2.2 Dec-04
0A
2A
4A
6A
1ns
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
50Ω
100Ω
150Ω
200Ω
250Ω
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, RG = 47Ω,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175°C,
VCE= 400V, VGE = 0/15V, IC = 4A,
Dynamic test circuit in Figure E)
25°C
50°C
75°C
100°C 125°C 150°C
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
-50°C
0°C
50°C
100°C
150°C
0V
1V
2V
3V
4V
5V
6V
7V
min.
typ.
max.
TJ, JUNCTION TEMPERATURE
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 4A, RG=47Ω,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 60 µA)
 7 page
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IKP04N60T
TrenchStop Series
q
Power Semiconductors
7
Rev. 2.2 Dec-04
0A
2A
4A
6A
0.0m J
0.1m J
0.2m J
0.3m J
E
ts*
E
off
*) E
on a nd E tsin c lude lo sses
due to diode recovery
E
on*
25Ω 50Ω
100Ω
150Ω
200Ω
250Ω
0.0 mJ
0.1 mJ
0.2 mJ
0.3 mJ
0.4 mJ
E
ts*
E
on*
*) E
on and Ets include losses
due to diode recovery
E
off
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, RG = 47Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, IC = 4A,
Dynamic test circuit in Figure E)
25°C
50°C
75°C 100°C 125°C 150°C
0µJ
25µJ
50µJ
75µJ
100µJ
125µJ
150µJ
175µJ
E
ts*
E
on*
*) E
on an d E ts in clude lo sses
due to diode recovery
E
off
300V
350V
400V
450V
0.00m J
0.05m J
0.10m J
0.15m J
0.20m J
0.25m J
E
ts*
E
on*
*) E
on a nd E ts in clu de lo s s e s
due to diode recovery
E
off
TJ, JUNCTION TEMPERATURE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 4A, RG = 47Ω,
Dynamic test circuit in Figure E)
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 4A, RG = 47Ω,
Dynamic test circuit in Figure E)
 8 page
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IKP04N60T
TrenchStop Series
q
Power Semiconductors
8
Rev. 2.2 Dec-04
0nC
5nC 10nC 15nC 20nC 25nC 30nC
0V
5V
10V
15V
480V
120V
0V
10V 20V 30V 40V 50V 60V 70V
10pF
100pF
C
rss
C
oss
C
iss
QGE, GATE CHARGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge
(IC=4 A)
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
12V
14V
16V
18V
0A
10A
20A
30A
40A
50A
60A
10V
11V
12V
13V
14V
0µs
2µs
4µs
6µs
8µs
10µs
12µs
VGE, GATE-EMITTETR VOLTAGE
VGE, GATE-EMITETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-
emitter voltage
(VCE
≤ 400V, Tj ≤ 150°C)
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C,
TJmax<150°C)
 9 page
background image
IKP04N60T
TrenchStop Series
q
Power Semiconductors
9
Rev. 2.2 Dec-04
1µs10µs 100µs
1ms
10ms 100ms
10
-1K/W
10
0K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
1µs10µs100µs 1ms
10ms 100ms
10
-1K/W
10
0K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
tP, PULSE WIDTH
tP, PULSE WIDTH
Figure 21. IGBT transient thermal resistance
(D = tp / T)
Figure 22. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
400A/µs
600A/µs
0ns
40ns
80ns
120ns
160ns
200ns
240ns
280ns
T
J=25°C
T
J=175°C
400A/µs
600A/µs
0.00µC
0.05µC
0.10µC
0.15µC
0.20µC
0.25µC
0.30µC
0.35µC
T
J=25°C
T
J=175°C
diF/dt, DIODE CURRENT SLOPE
diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(VR=400V, IF=4A,
Dynamic test circuit in Figure E)
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(VR = 400V, IF = 4A,
Dynamic test circuit in Figure E)
R
,(K / W )
τ , (s )
0.38216
5.16*10
-2
0.68326
7.818*10
-3
1.49884
9*10
-4
0.93550
1.134*10
-4
C 1=
τ1/R1
R1
R2
C2=
τ2/R2
R
,( K/ W )
τ , (s )
0.29183
7.018*10
-2
6
0.79081
1.114*10
-2
1.86970
1.236*10
-3
2.04756
2.101*10
-4
C 1=
τ1/R1
R1
R2
C 2=
τ2/R2
 10 page
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IKP04N60T
TrenchStop Series
q
Power Semiconductors
10
Rev. 2.2 Dec-04
400A/µs
600A/µs
0A
2A
4A
6A
8A
10A
T
J=2 5 °C
T
J= 1 75°C
400A/µs
600A/µs
0A/µs
-100A/µs
-200A/µs
-300A/µs
T
J=25°C
T
J=175°C
diF/dt, DIODE CURRENT SLOPE
diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
(VR = 400V, IF = 4A,
Dynamic test circuit in Figure E)
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR=400V, IF=4A,
Dynamic test circuit in Figure E)
0V
1V
2V
0A
2A
4A
6A
8A
10A
175°C
T
J=25°C
0°C
50°C
100°C
150°C
0.0V
0.5V
1.0V
1.5V
2.0V
4A
I
F=8A
2A
VF, FORWARD VOLTAGE
TJ, JUNCTION TEMPERATURE
Figure 27. Typical diode forward current as
a function of forward voltage
Figure 28. Typical diode forward voltage as a
function of junction temperature
 11 page
background image
IKP04N60T
TrenchStop Series
q
Power Semiconductors
11
Rev. 2.2 Dec-04
Dimensions
symbol
[mm]
[inch]
min
max
min
max
A
9.70
10.30
0.3819
0.4055
B
14.88
15.95
0.5858
0.6280
C
0.65
0.86
0.0256
0.0339
D
3.55
3.7
0.1398
0.1457
E
2.60
3.00
0.1024
0.1181
F
6.00
6.80
0.2362
0.2677
G
13.00
14.00
0.5118
0.5512
H
4.35
4.75
0.1713
0.1870
K
0.38
0.65
0.0150
0.0256
L
0.95
1.32
0.0374
0.0520
M
2.54 typ.
0.1 typ.
N
4.30
4.50
0.1693
0.1772
P
1.17
1.40
0.0461
0.0551
T
2.30
2.72
0.0906
0.1071
TO-220AB
 12 page
background image
IKP04N60T
TrenchStop Series
q
Power Semiconductors
12
Rev. 2.2 Dec-04
Figure A. Definition of switching times
Figure B. Definition of switching losses
I
rr m
90% I
rr m
10% I
rrm
di /dt
F
t
rr
I
F
i,v
t
Q
S
Q
F
t
S
t
F
V
R
di /dt
rr
Q=Q
Q
rr
S
F
+
t=t
t
rr
S
F
+
Figure C. Definition of diodes
switching characteristics
p(t)
12
n
T(t)
j
τ1
1
τ2
2
n
n
τ
TC
rr
r
r
r
r
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance Lσ =60nH
and Stray capacity Cσ =40pF.
 13 page
background image
IKP04N60T
TrenchStop Series
q
Power Semiconductors
13
Rev. 2.2 Dec-04
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2004
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or
systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.




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