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IRF5210SPBF 데이터시트(Datasheet) 1 Page - International Rectifier

부품명 IRF5210SPBF
상세내용  HEXFET Power MOSFET
PDF  10 Pages
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제조사  IRF [International Rectifier]
홈페이지  http://www.irf.com
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 1 page
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IRF5210SPbF
IRF5210LPbF
HEXFET® Power MOSFET
PD - 97049A
VDSS = -100V
RDS(on) = 60mΩ
ID = -38A
l Advanced Process Technology
l Ultra Low On-Resistance
l 150°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Some Parameters are Different from
IRF5210S/L
l P-Channel
l Lead-Free
05/22/06
S
D
G
www.irf.com
1
Absolute Maximum Ratings
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ -10V
A
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V
IDM
Pulsed Drain Current
c
PD @TA = 25°C
Maximum Power Dissipation
W
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
c
A
EAR
Repetitive Avalanche Energy
c
mJ
dv/dt
Peak Diode Recovery dv/dt
e
V/ns
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.75
°C/W
RθJA
Junction-to-Ambient (PCB Mount, steady state)
g
–––
40
170
1.3
± 20
0.017
120
-23
300 (1.6mm from case )
-55 to + 150
-7.4
Max.
-38
-24
-140
3.1
D2Pak
IRF5210SPbF
TO-262
IRF5210LPbF
S
D
G
D
S
D
G
D
GD
S
Gate
Drain
Source
Description
Features of this design are a 150°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These fea-
tures combine to make this design an extremely
efficient and reliable device for use in a wide
variety of other applications.
 2 page
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IRF5210S/LPbF
2
www.irf.com
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11)
‚ Starting TJ= 25°C, L = 0.46mH
RG = 25Ω, IAS = -23A. (See Figure 12)
ƒ ISD ≤ -23A, di/dt ≤ -650A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C.
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… When mounted on 1" square PCB (FR-4or G-10
Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage-100
–––
–––
V
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
-0.11
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
60
m
VGS(th)
Gate Threshold Voltage-2.0
–––
-4.0
V
gfs
Forward Transconductance
9.5
–––
–––
S
IDSS
Drain-to-Source Leakage Current
–––
–––
-50
µA
–––
–––
-250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage–––
–––
-100
Qg
Total Gate Charge
–––
150
230
nC
Qgs
Gate-to-Source Charge
–––
22
33
Qgd
Gate-to-Drain ("Miller") Charge–––
81
120
td(on)
Turn-On Delay Time
–––
14
–––
ns
tr
Rise Time
–––
63
–––
td(off)
Turn-Off Delay Time
–––
72
–––
tf
Fall Time
–––
55
–––
LD
Internal Drain Inductance
–––
4.5
–––
nH
Between lead,
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
2780
–––
pF
Coss
Output Capacitance
–––
800
–––
Crss
Reverse Transfer Capacitance
–––
430
–––
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
-38
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
-140
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
-1.6
V
trr
Reverse Recovery Time
–––
170
260
ns
Qrr
Reverse Recovery Charge
–––
1180 1770
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VDS = VGS, ID = -250µA
VDS = -100V, VGS = 0V
VDS = -80V, VGS = 0V, TJ = 125°C
Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = 10V, ID = -38A
f
TJ = 25°C, IF = -23A, VDD = -25V
di/dt = -100A/µs
f
TJ = 25°C, IS = -23A, VGS = 0V f
showing the
integral reverse
p-n junction diode.
VGS = -10V f
MOSFET symbol
VGS = 0V
VDS = -25V
Conditions
ƒ = 1.0MHz, See Fig. 5
RG = 2.4Ω
ID = -23A
VDS = -50V, ID = -23A
VDD = -50V
ID = -23A
VGS = 20V
VGS = -20V
VDS = -80V
VGS = -10V f
 3 page
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IRF5210S/LPbF
www.irf.com
3
Fig 4. Normalized On-Resistance
vs.Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
-V DS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
VGS
TOP
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM
-4.5V
≤60µs PULSE WIDTH
Tj = 25°C
-4.5V
0.1
1
10
100
-V DS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
-4.5V
≤60µs PULSE WIDTH
Tj = 150°C
VGS
TOP
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM
-4.5V
2
4
6
8
10
12
14
-VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
TJ = 25°C
TJ = 150°C
VDS = -50V
≤60µs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
ID = -38A
VGS = -10V
 4 page
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IRF5210S/LPbF
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-SourceVoltage
Fig 5. Typical Capacitance vs.
Drain-to-SourceVoltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
-VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0
25
50
75
100
125
150
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
VDS= -80V
VDS= -50V
VDS= -20V
ID= -23A
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
TJ = 25°C
TJ = 150°C
VGS = 0V
1
10
100
1000
-VDS, Drain-to-Source Voltage (V)
1
10
100
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
Tc = 25°C
Tj = 150°C
Single Pulse
100µsec
1msec
10msec
 5 page
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IRF5210S/LPbF
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5
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs.
CaseTemperature
VDS
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
VDS
90%
10%
VGS
td(on)
tr
td(off) tf
25
50
75
100
125
150
TC , Case Temperature (°C)
0
5
10
15
20
25
30
35
40
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W)
τι (sec)
0.128309 0.000069
0.377663 0.001772
0.244513 0.010024
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
τ
C
Ci=
τi/Ri
Ci=
τi/Ri
 6 page
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IRF5210S/LPbF
6
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Fig 14b. Gate Charge Test Circuit
Fig 14a. Basic Gate Charge Waveform
Fig 13. Maximum Avalanche Energy
vs.DrainCurrent
QG
QGS
QGD
VG
Charge
-10V
D.U.T.
VDS
ID
IG
-3mA
VGS
.3
µF
50K
.2
µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V(BR)DSS
IAS
RG
IAS
0.01
tp
D.U.T
L
VDS
VDD
DRIVER
A
15V
-20V
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
250
300
350
400
450
500
ID
TOP
-8.7A
-14A
BOTTOM -23A
 7 page
background image
IRF5210S/LPbF
www.irf.com
7
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
ƒ
„
‚
RG
VDD
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer

* Reverse Polarity of D.U.T for P-Channel
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[
] ***
Fig 15. For P-Channel HEXFETS
VGS
 8 page
background image
IRF5210S/LPbF
8
www.irf.com
D2Pak (TO-263AB) Part Marking Information
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
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 9 page
background image
IRF5210S/LPbF
www.irf.com
9
TO-262 Part Marking Information
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
GPBP
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GPBP
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 10 page
background image
IRF5210S/LPbF
10
www.irf.com
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 05/06
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.




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