전자부품 데이터시트 검색엔진
Selected language     Korean  ▼
부품명
         상세내용
Preview PDF Download HTML-1page HTML-10pages

IRF1405ZPBF 데이터시트(Datasheet) 1 Page - International Rectifier

부품명 IRF1405ZPBF
상세내용  AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 4.9mΩ , ID = 75A )
PDF  13 Pages
Scroll/Zoom Zoom In 100% Zoom Out
제조사  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo 

 
 1 page
background image
IRF1405ZPbF
IRF1405ZSPbF
IRF1405ZLPbF
HEXFET® Power MOSFET
VDSS = 55V
RDS(on) = 4.9mΩ
ID = 75A
07/22/05
www.irf.com
1
AUTOMOTIVE MOSFET
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
S
D
G
Features
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free
Absolute Maximum Ratings
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
™
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS (Thermally limited) Single Pulse Avalanche Energyd
mJ
EAS (Tested )
Single Pulse Avalanche Energy Tested Value
h
IAR
Avalanche Current
Ù
A
EAR
Repetitive Avalanche Energy
g
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.65
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient
–––
62
RθJA
Junction-to-Ambient (PCB Mount, steady state)
i
–––
40
420
270
See Fig.12a, 12b, 15, 16
230
1.5
± 20
Max.
150
110
600
75
-55 to + 175
300 (1.6mm from case )
10 lbf
yin (1.1Nym)
HEXFET® is a registered trademark of International Rectifier.
D2Pak
IRF1405ZSPbF
TO-220AB
IRF1405ZPbF
TO-262
IRF1405ZLPbF
PD - 97018
 2 page
background image
IRF1405Z/S/LPbF
2
www.irf.com
S
D
G
S
D
G
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
–––
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.049
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
3.7
4.9
m
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
88
–––
–––
S
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
200
nA
Gate-to-Source Reverse Leakage
–––
–––
-200
Qg
Total Gate Charge
–––
120
180
Qgs
Gate-to-Source Charge
–––
31
–––
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
46
–––
td(on)
Turn-On Delay Time
–––
18
–––
tr
Rise Time
–––
110
–––
td(off)
Turn-Off Delay Time
–––
48
–––
ns
tf
Fall Time
–––
82
–––
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
4780
–––
Coss
Output Capacitance
–––
770
–––
Crss
Reverse Transfer Capacitance
–––
410
–––
pF
Coss
Output Capacitance
–––
2730
–––
Coss
Output Capacitance
–––
600
–––
Coss eff.
Effective Output Capacitance
–––
910
–––
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
75
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
600
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
30
46
ns
Qrr
Reverse Recovery Charge
–––
30
45
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
f
VGS = 10V
e
VDD = 25V
ID = 75A
RG = 4.4Ω
TJ = 25°C, IS = 75A, VGS = 0V e
TJ = 25°C, IF = 75A, VDD = 25V
di/dt = 100A/µs
e
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 75A
e
VDS = VGS, ID = 250µA
VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VDS = 25V, ID = 75A
ID = 75A
VDS = 44V
Conditions
VGS = 10V
e
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 20V
VGS = -20V
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C, L = 0.10mH
RG = 25Ω, IAS = 75A, VGS =10V. Part not
recommended for use above this value.
ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
„ Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to 80%
VDSS .
… Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
† This value determined from sample failure population.
100% tested to this value in production.
‡ This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
 3 page
background image
IRF1405Z/S/LPbF
www.irf.com
3
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
4.5V
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
4.5V
20µs PULSE WIDTH
Tj = 175°C
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4
6
8
10
12
VGS, Gate-to-Source Voltage (V)
1
10
100
1000
TJ = 25°C
TJ = 150°C
VDS = 25V
20µs PULSE WIDTH
0
25
50
75
100 125 150 175 200
ID,Drain-to-Source Current (A)
0
25
50
75
100
125
150
175
200
TJ = 25°C
TJ = 175°C
 4 page
background image
IRF1405Z/S/LPbF
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0
20
40
60
80
100
120
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
VDS= 44V
VDS= 28V
ID= 75A
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
0.10
1.00
10.00
100.00
1000.00
TJ = 25°C
TJ = 175°C
VGS = 0V
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
Tc = 25°C
Tj = 175°C
Single Pulse
 5 page
background image
IRF1405Z/S/LPbF
www.irf.com
5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Normalized On-Resistance
vs. Temperature
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0
25
50
75
100
125
150
Limited By Package
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
ID = 75A
VGS = 10V
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
 6 page
background image
IRF1405Z/S/LPbF
6
www.irf.com
QG
QGS
QGD
VG
Charge
D.U.T.
VDS
ID
IG
3mA
VGS
.3
µF
50K
.2
µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V(BR)DSS
IAS
Fig 14. Threshold Voltage vs. Temperature
RG
IAS
0.01
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
VGS
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
100
200
300
400
500
ID
TOP
31A
53A
BOTTOM 75A
-75 -50 -25
0
25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
3.5
4.0
ID = 250µA
 7 page
background image
IRF1405Z/S/LPbF
www.irf.com
7
Fig 15. Typical Avalanche Current vs.Pulsewidth
Fig 16. Maximum Avalanche Energy
vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7.
∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
1
10
100
1000
10000
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche
pulsewidth,
tav
assuming
∆ Tj = 25°C due to
avalanche losses
0.01
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
250
300
TOP
Single Pulse
BOTTOM 10% Duty Cycle
ID = 75A
 8 page
background image
IRF1405Z/S/LPbF
8
www.irf.com
Fig 17.
Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
CircuitLayoutConsiderations
• Low Stray Inductance
• Ground Plane
• LowLeakageInductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
ƒ
„
‚
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T

VDS
90%
10%
VGS
td(on)
tr
td(off) tf
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-VDD
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
 9 page
background image
IRF1405Z/S/LPbF
www.irf.com
9
TO-220AB Part Marking Information
@Y6HQG@)
DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅ8Å
UCDTÃDTÃ6IÃDSA  Ã
GPUÃ8P9@Ã &'(
6TT@H7G@9ÃPIÃXXÃ (Ã ((&
Q6SUÃIVH7@S
6TT@H7G`
GPUÃ8P9@
96U@Ã8P9@
`@6SÃ&Ã2Ã ((&
GDI@Ã8
X@@FÃ (
GPBP
S@8UDAD@S
DIU@SI6UDPI6G
Note: "P" in assembly line
position indicates "Lead-Free"
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
 10 page
background image
IRF1405Z/S/LPbF
10
www.irf.com
D2Pak Part Marking Information
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
96U@Ã8P9@
`@6SÃÃ2Ã!
X@@FÃ!
6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@
S@8UDAD@S
DIU@SI6UDPI6G
Q6SUÃIVH7@S
QÃ2Ã9@TDBI6U@TÃG@69ÃÃAS@@
QSP9V8UÃPQUDPI6G
A$"T
DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅGÅ
6TT@H7G@9ÃPIÃXXÃ!Ã!
UCDTÃDTÃ6IÃDSA$"TÃXDUC
GPUÃ8P9@Ã'!#
DIU@SI6UDPI6G
GPBP
S@8UDAD@S
GPUÃ8P9@
6TT@H7G`
`@6SÃÃ2Ã!
Q6SUÃIVH7@S
96U@Ã8P9@
GDI@ÃG
X@@FÃ!
25
A$"T
GPBP
6TT@H7G`
GPUÃ8P9@




Html 페이지

1  2  3  4  5  6  7  8  9  10  11  12  13 


데이터시트



관련 부품명

부품명상세내용Html View제조사
IRLZ44ZPBFAUTOMOTIVE MOSFET VDSS = 55V RDS on =13.5mΩ ID = 51A 1 2 3 4 5 MoreInternational Rectifier
IRLZ34NSPBFHEXFET Power MOSFET VDSS = 55V RDS on = 0.035Ω ID = 30A 1 2 3 4 5 MoreInternational Rectifier
IRFP2907PBFAUTOMOTIVE MOSFET VDSS = 75V RDS on = 4.5mΩ ID = 209A 1 2 3 4 5 MoreInternational Rectifier
IRF7342PBFHEXFET® Power MOSFET VDSS = -55V RDS on = 0.105Ω 1 2 3 4 5 MoreInternational Rectifier
IRF7353D2PBFMOSFET / Schottky Diode VDSS = 30V RDS on = 0.029Ω Schottky VF = 0.52V 1 2 3 4 5 MoreInternational Rectifier
IRFD224PBFHEXFET POWER MOSFET VDSS = 250V RDS on = 1.1Ω ID = 0.63A 1 2 3 4 5 MoreInternational Rectifier
IRL640PBFHEXFET Power MOSFET VDSS = 200V RDS on = 0.18Ω ID = 17A 1 2 3 4 5 MoreInternational Rectifier
IRFP2907ZAUTOMOTIVE MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRF540ZPBFAUTOMOTIVE MOSFET 1 2 3 4 5 MoreInternational Rectifier

링크 URL

ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ]  

Alldatasheet는?   |   광고문의    |   운영자에게 연락하기   |   개인정보취급방침   |   즐겨찾기   |   링크교환   |   제조사별 검색
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl