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IRFR2905ZPBF 데이터시트(Datasheet) 1 Page - International Rectifier

부품명 IRFR2905ZPBF
상세내용  HEXFET® Power MOSFET ( VDSS = 55V , RDS(on) = 14.5mΩ , ID = 42A )
PDF  12 Pages
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제조사  IRF [International Rectifier]
홈페이지  http://www.irf.com
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 1 page
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IRFR2905ZPbF
IRFU2905ZPbF
HEXFET® Power MOSFET
VDSS = 55V
RDS(on) = 14.5mΩ
ID = 42A
12/14/04
www.irf.com
1
AUTOMOTIVE MOSFET
PD - 95943A
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and
a wide variety of other applications.
S
D
G
Description
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
Features
D-Pak
IRFR2905Z
I-Pak
IRFU2905Z
HEXFET® is a registered trademark of International Rectifier.
Absolute Maximum Ratings
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
™
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS (Thermally limited) Single Pulse Avalanche Energyd
mJ
EAS (Tested )
Single Pulse Avalanche Energy Tested Value
h
IAR
Avalanche Current
Ù
A
EAR
Repetitive Avalanche Energy
g
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
1.38
RθJA
Junction-to-Ambient (PCB mount)
ij
–––
40
°C/W
RθJA
Junction-to-Ambient
j
–––
110
82
55
See Fig.12a, 12b, 15, 16
110
0.72
± 20
Max.
59
42
240
42
-55 to + 175
300 (1.6mm from case )
10 lbf
yin (1.1Nym)
l
Lead-Free
 2 page
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2
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S
D
G
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
–––
V
∆V
(BR)DSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.053
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
11.1
14.5
m
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
20
–––
–––
S
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
200
nA
Gate-to-Source Reverse Leakage
–––
–––
-200
Qg
Total Gate Charge
–––
29
44
Qgs
Gate-to-Source Charge
–––
7.7
–––
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
12
–––
RG
Gate Input Resistance
–––
1.3
–––
f = 1MHz, open drain
td(on)
Turn-On Delay Time
–––
14
–––
tr
Rise Time
–––66–––
td(off)
Turn-Off Delay Time
–––
31
–––
ns
tf
Fall Time
–––35–––
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
1380
–––
Coss
Output Capacitance
–––
240
–––
Crss
Reverse Transfer Capacitance
–––
120
–––
pF
Coss
Output Capacitance
–––
820
–––
Coss
Output Capacitance
–––
190
–––
Coss eff.
Effective Output Capacitance
–––
300
–––
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
36
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
240
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
23
35
ns
Qrr
Reverse Recovery Charge
–––
16
24
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
f
VGS = 10V
e
VDD = 28V
ID = 36A
RG = 15 Ω
TJ = 25°C, IS = 36A, VGS = 0V e
TJ = 25°C, IF = 36A, VDD = 28V
di/dt = 100A/µs
e
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 36A
e
VDS = VGS, ID = 250µA
VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VDS = 25V, ID = 36A
ID = 36A
VDS = 44V
Conditions
VGS = 10V
e
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 20V
VGS = -20V
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3
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
Vs. Drain Current
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
≤ 60µs PULSE WIDTH
Tj = 25°C
4.5V
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
0
1
10
100
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
≤ 60µs PULSE WIDTH
Tj = 175°C
4.5V
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.0
5.0
6.0
7.0
8.0
9.0
10.0
VGS, Gate-to-Source Voltage (V)
1.0
10.0
100.0
1000.0
VDS = 25V
≤ 60µs PULSE WIDTH
TJ = 25°C
TJ = 175°C
0
102030
4050
ID, Drain-to-Source Current (A)
0
10
20
30
40
50
TJ = 25°C
TJ = 175°C
VDS = 15V
380µs PULSE WIDTH
 4 page
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
0
400
800
1200
1600
2000
2400
Coss
Crss
Ciss
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
1020304050
QG Total Gate Charge (nC)
0
4
8
12
16
20
VDS= 44V
VDS= 28V
VDS= 11V
ID= 36A
FOR TEST CIRCUIT
SEE FIGURE 13
0.2
0.6
1.0
1.4
1.8
2.2
VSD, Source-toDrain Voltage (V)
0.1
1.0
10.0
100.0
1000.0
TJ = 25°C
TJ = 175°C
VGS = 0V
1
10
100
1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
 5 page
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5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Normalized On-Resistance
Vs. Temperature
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0
10
20
30
40
50
60
70
LIMITED BY PACKAGE
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
ID = 36A
VGS = 10V
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W)
τi (sec)
0.3962
0.00012
0.5693
0.00045
0.4129
0.0015
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
τ
C
Ci= i
/Ri
Ci=
τi/Ri
 6 page
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IRFR/U2905ZPbF
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QG
QGS
QGD
VG
Charge
D.U.T.
VDS
ID
IG
3mA
VGS
.3
µF
50K
.2
µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V(BR)DSS
IAS
Fig 14. Threshold Voltage Vs. Temperature
RG
IAS
0.01
tp
D.U.T
L
VDS
+
-
VDD
DRIVER
A
15V
20V
VGS
25
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
0
40
80
120
160
200
240
I D
TOP
36A
8.6A
BOTTOM
4.8A
-75
-50
-25
0
25
50
75
100 125 150 175
TJ , Temperature ( °C )
2.0
2.5
3.0
3.5
4.0
4.5
ID = 250µA
 7 page
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7
Fig 15. Typical Avalanche Current Vs.Pulsewidth
Fig 16. Maximum Avalanche Energy
Vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7.
∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2
DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
0.1
1
10
100
1000
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche
pulsewidth,
tav
assuming
∆ Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
10
20
30
40
50
60
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 36A
 8 page
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IRFR/U2905ZPbF
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Fig 17.
Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
ƒ
„
‚
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T

VDS
90%
10%
VGS
td(on)
tr
td(off) tf
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-V
DD
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
 9 page
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9
D-Pak (TO-252AA) Part Marking Information
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
12
IN THE ASSEMBLY LINE "A"
ASSEMBLED ON WW 16, 1999
EXAMPLE:
WITH ASSEMBLY
THIS IS AN IRFR120
LOT CODE 1234
YEAR 9 = 1999
DATE CODE
WEEK 16
PART NUMBER
LOGO
INTERNATIONAL
RECTIFIER
ASSEMBLY
LOT CODE
916A
IRFU120
34
YEAR 9 = 1999
DATE CODE
OR
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
Note: "P" in assembly line position
indicates "Lead-Free"
12
34
WEEK 16
A = ASSEMBLY SITE CODE
PART NUMBER
IRFU120
LINE A
LOGO
LOT CODE
ASSEMBLY
INTERNATIONAL
RECTIFIER
 10 page
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IRFR/U2905ZPbF
10
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I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
ASSEMBLY
EXAMPLE:
WIT H ASSEMBLY
T HIS IS AN IRFU120
YEAR 9 = 1999
DAT E CODE
LINE A
WEEK 19
IN T HE ASSEMBLY LINE "A"
AS S E MBLE D ON WW 19, 1999
LOT CODE 5678
PART NUMBER
56
IRFU120
INTE RNAT IONAL
LOGO
RECT IF IER
LOT CODE
919A
78
Note: "P" in ass embly line
pos ition indicates "Lead-Free"
OR
56
78
AS SEMBLY
LOT CODE
RECTIF IER
LOGO
INT ERNAT IONAL
IRFU120
PART NUMBE R
WE EK 19
DATE CODE
YEAR 9 = 1999
A = ASS EMBLY SIT E CODE
P = DES IGNAT ES LEAD-F REE
PRODUCT (OPTIONAL)




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