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L2SC5658M3T5G 데이터시트(Datasheet) 1 Page - Leshan Radio Company

부품명 L2SC5658M3T5G
상세내용  General Purpose Amplifier NPN Silicon Transistor
PDF  4 Pages
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제조사  LRC [Leshan Radio Company]
홈페이지  http://www.lrc.cn/
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 1 page
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LESHAN RADIO COMPANY, LTD.
SOT-723
L2SC5658M3T5G
L2SC5658M3T5G-1/4
1
2
3
General Purpose Amplifier
NPN Silicon Transistor
This NPN transistor is designed for general purpose amplifier
applications. This device is housed in the SOT-723 package which is
designed for low power surface mount applications, where board
space is at a premium.
Reduces Board Space
High hFE, 210−460 (typical)
Low VCE(sat), < 0.5 V
ESD Performance: Human Body Model; u 2000 V,
Machine Model;
u 200 V
Available in 8 mm, 7-inch/3000 Unit Tape and Reel
This is a Pb−Free Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V(BR)CBO
50
Vdc
Collector-Emitter Voltage
V(BR)CEO
50
Vdc
Emitter-Base Voltage
V(BR)EBO
5.0
Vdc
Collector Current − Continuous
IC
100
mAdc
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation (Note 1)
PD
260
mW
Junction Temperature
TJ
150
°C
Storage Temperature Range
Tstg
− 55 ~ + 150
°C
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
2
EMITTER
3
COLLECTOR
1
BASE
MARKING
DIAGRAM
XX M
XX = Specific Device Code
M = Date Code
Device
Package
Shipping
ORDERING INFORMATION
L2SC5658M3T5G
SOT-723
3000/Tape & Reel
Version 1.0
 2 page
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LESHAN RADIO COMPANY, LTD.
L2SC5658M3T5G-2/4
L2SC5658M3T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage (IC = 50 mAdc, IE = 0)
V(BR)CBO
50
Vdc
Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
V(BR)CEO
50
Vdc
Emitter-Base Breakdown Voltage (IE = 50 mAdc, IE = 0)
V(BR)EBO
5.0
Vdc
Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0)
ICBO
0.5
mA
Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IB = 0)
IEBO
0.5
mA
Collector-Emitter Saturation Voltage (Note 2)
(IC = 60 mAdc, IB = 5.0 mAdc)
VCE(sat)
0.4
Vdc
DC Current Gain (Note 2)
(VCE = 6.0 Vdc, IC = 1.0 mAdc)
hFE
120
560
Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz)
fT
180
MHz
Output Capacitance (VCB = 12 Vdc, IC = 0 Adc, f = 1.0 MHz)
COB
2.0
pF
2. Pulse Test: Pulse Width
≤ 300 ms, D.C. ≤ 2%.
Version 1.0
 3 page
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LESHAN RADIO COMPANY, LTD.
L2SC5658M3T5G-3/4
L2SC5658M3T5G
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. IC − VCE
VCE, COLLECTOR VOLTAGE (V)
Figure 2. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 3. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 4. On Voltage
IC, COLLECTOR CURRENT (mA)
60
0
50
40
30
20
10
0
24
6
8
TA = 25°C
160 mA
140 mA
120 mA
100 mA
80 mA
60 mA
40 mA
IB = 20 mA
1000
0.1
100
10
1
10
100
TA = 25°C
TA = −25°C
TA = 75°C
VCE = 10 V
2
0.01
1.5
1
0.5
0
0.1
1
10
100
TA = 25°C
900
0.2
800
700
600
500
400
300
200
100
0.5
1
5
10
20
40
60
80 100 150 200
TA = 25°C
VCE = 5 V
0
Figure 5. Capacitance
VCB (V)
Figure 6. Capacitance
VEB (V)
20
0
18
16
14
12
10
12
3
4
7
0
6
5
4
3
2
1
10
20
30
40
Version 1.0
 4 page
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L2SC5658M3T5G-4/4
L2SC5658M3T5G
PACKAGE DIMENSIONS
D
b1
E
b
e
A
L
C
H
−Y−
−X−
X
0.08 (0.0032)
Y
2X
E
1
2
3
1.0
0.039
mm
inches
0.40
0.0157
0.40
0.0157
0.40
0.0157
0.40
0.0157
0.40
0.0157
PIN 1. BASE
2. EMITTER
3. COLLECTOR
DIM
MIN
NOM
MAX
MILLIMETERS
A
0.45
0.50
0.55
b
0.15
0.20
0.27
b1
0.25
0.3
0.35
C
0.07
0.12
0.17
D
1.15
1.20
1.25
E
0.75
0.80
0.85
e
0.40 BSC
H
1.15
1.20
1.25
L
0.15
0.20
0.25
0.018
0.020
0.022
0.0059 0.0079 0.0106
0.010
0.012
0.014
0.0028 0.0047 0.0067
0.045
0.047
0.049
0.03
0.032
0.034
0.016 BSC
0.045
0.047
0.049
0.0059 0.0079 0.0098
MIN
NOM
MAX
INCHES
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
SOT−723
SOLDERING FOOTPRINT
Version 1.0
LESHAN RADIO COMPANY, LTD.




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