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S8050M 데이터시트(Datasheet) 1 Page - Foshan Blue Rocket Electronics Co.,Ltd.

부품명 S8050M
상세내용  Silicon NPN transistor in a SOT-23 Plastic Package
PDF  6 Pages
Scroll/Zoom Zoom In 100% Zoom Out
제조사  FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]
홈페이지  http://www.fsbrec.com/
Logo 

   
 1 page
background image
S8050M
Rev.F Apr.-2017
DATA SHEET
http://www.fsbrec.com
1 / 6
SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.

与 S8550M 互补。
Complementary pair with S8550M.

用于功率放大电路。
Power amplifier applications.

PIN1
:Base
PIN 2
: Emitter
PIN 3
:Collector
放大及印章代码 / hFE Classifications & Marking
hFE Classifications
Symbol
B
C
D
hFE Range
85~160
120~200
160~300
Marking
HY3B
HY3C
HY3D
描述 / Descriptions
特征 / Features
用途 / Applications
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
2
3
1
 2 page
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S8050M
Rev.F Apr.-2017
DATA SHEET
http://www.fsbrec.com
2 / 6
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
VCBO
40
V
Collector to Emitter Voltage
VCEO
25
V
Emitter to Base Voltage
VEBO
6.0
V
Collector Current
IC
800
mA
Base Current
IB
200
mA
Collector Power Dissipation
PC
450
mW
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55~150
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Collector to Base Breakdown
Voltage
VCBO
IC=0.1mA
IE=0
40
V
Collector to Emitter Breakdown
Voltage
VCEO
IC=2.0mA
IB=0
25
V
Emitter to Base Breakdown
Voltage
VEBO
IE=0.1mA
IC=0
6.0
V
Collector Cut-Off Current
ICBO
VCB=35V
IE=0
0.1
μA
Emitter Cut-Off Current
IEBO
VEB=6.0V
IC=0
0.1
μA
DC Current Gain
hFE(1)
VCE=1.0V
IC=100mA
85
300
hFE(2)
VCE=1.0V
IC=500mA
40
hFE(3)
VCE=1.0V
IC=5.0mA
45
Collector-Emitter Saturation
voltage
VCE(sat)
IC=500mA
IB=50mA
0.28
0.5
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=500mA
IB=50mA
0.98
1.2
V
Base-Emitter Voltage
VBE
VCE=1.0V
IC=10mA
0.66
1.0
V
Transition Frequency
fT
VCE=10V
IC=50mA
100
190
MHz
Collector Output Capacitance
Cob
VCB=10V
IE=0
f=1.0MHz
9.0
pF
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)
 3 page
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S8050M
Rev.F Apr.-2017
DATA SHEET
http://www.fsbrec.com
3 / 6
电参数曲线图 / Electrical Characteristic Curve
 4 page
background image
S8050M
Rev.F Apr.-2017
DATA SHEET
http://www.fsbrec.com
4 / 6
外形尺寸图 / Package Dimensions
 5 page
background image
S8050M
Rev.F Apr.-2017
DATA SHEET
http://www.fsbrec.com
5 / 6
印章说明 / Marking Instructions
说明:
H: 
为公司代码
Y3: 
为型号代码
B: 
为 hFE 档次代码
Note:
H:
Company Code
Y3:
Product Type Code
B: 
hFE Classifications Symbol Code
HY3B
 6 page
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S8050M
Rev.F Apr.-2017
DATA SHEET
http://www.fsbrec.com
6 / 6
回流焊温度曲线图(无铅) / Temperature Profile for IR Reflow Soldering(Pb-Free)
说明:
Note:
1
、预热温度 25~150℃,时间 60~90sec;
1.Preheating:25~150
℃, Time:60~90sec.
2
、峰值温度 245±5℃,时间持续为 5±0.5sec;
2.Peak Temp.:245
±5℃, Duration:5±0.5sec.
3
、焊接制程冷却速度为 2~10℃/sec.
3. Cooling Speed: 2~10
℃/sec.
耐焊接热试验条件 /
Resistance to Soldering Heat Test Conditions
温度:260±5℃
时间:10±1 sec.
Temp.:260±5℃
Time:10±1 sec
包装规格 / Packaging SPEC.
卷盘包装 / REEL
Package Type
封装形式
Units 包装数量
Dimension 包装尺寸 (unit:mm
3)
Units/Reel
/卷盘
Reels/Inner Box
卷盘
/盒
Units/Inner Box
/盒
Inner Boxes/Outer Box
/箱
Units/Outer Box
/箱
Reel
Inner Box 盒
Outer Box 箱
SOT-23
3,000
10
30,000
6
180,000
7〞×8
180×120×180
390×385×205
使用说明 / Notices




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