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STBV45D 데이터시트(Datasheet) 1 Page - Foshan Blue Rocket Electronics Co.,Ltd.

부품명 STBV45D
상세내용  Silicon NPN transistor in a TO-92 Plastic Package
PDF  6 Pages
Scroll/Zoom Zoom In 100% Zoom Out
제조사  FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]
홈페이지  http://www.fsbrec.com/
Logo 

   
 1 page
background image
STBV45D
Rev.E Mar.-2016
DATA SHEET
http://www.fsbrec.com
1 / 6
TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package.

高压性能好,低动态参数变化,开关速度快。 
High voltage capability,Low spread of dynamic parameters,Very high switching speed.
主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。
High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc.
PIN1
:Base
PIN 2
:Collector
PIN 3
:Emitter
放大及印章代码 / hFE Classifications & Marking
见印章说明。See Marking Instructions.
描述 / Descriptions
特征 / Features
用途 / Applications
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
1 2
3
 2 page
background image
STBV45D
Rev.E Mar.-2016
DATA SHEET
http://www.fsbrec.com
2 / 6
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
VCES
700
V
Collector to Emitter Voltage
VCEO
400
V
Emitter to Base Voltage
VEBO
9.0
V
Collector Current - Continuous
IC
0.75
A
Peak Collector Current - Continuous
ICM
1.5
A
Base Current - Continuous
IB
0.4
A
Peak Base Current - Continuous
IBM
0.75
A
Collector Power Dissipation
PC
0.95
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55~150
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Collector to Base Breakdown
Voltage
VCES
IC=1mA
VBE=0
700
V
Collector to Emitter Breakdown
Voltage
VCEO
IC=10mA
IB=0
400
V
Emitter to Base Breakdown
Voltage
VEBO
IE=1mA
IC=0
9
V
Collector Cut-Off Current
ICEV
VCE=700V
VBE=-1.5V
0.1
mA
Collector cut-off current
ICEO
VCE=400V
IB=0
0.1
mA
Emitter Base Cut-Off Current
IEBO
VEB=9.0V
IC=0
0.1
mA
DC Current Gain
*hFE(1)
VCE=5.0V
IC=0.2A
10
30
*hFE(2)
VCE=5.0V
IC=0.4A
5
20
Collector to Emitter Saturation
Voltage
*VCE(sat)1 IC=0.2A
IB=0.04A
0.2
0.5
V
*VCE(sat)2 IC=0.3A
IB=0.075A
0.3
1.0
V
*VCE(sat)3 IC=0.4A
IB=0.135A
0.4
1.5
V
Base to Emitter Saturation Voltage
*VBE(sat)1 IC=0.2A
IB=0.04A
1.0
V
*VBE(sat)2 IC=0.3A
IB=0.075A
1.2
V
Fall time
tf
VCE=5V
IC=100mA
(UI9600)
0.6
μS
Storage time
ts
4.0
μS
Transition Frequency
fT
VCE=10V
IC=50mA
f=1MHz
5
MHz
*脉冲测试:脉冲周期=300μS,占空比=1.5%。
*Pulsed:Pulsed duration=300μs,duty cycle≤1.5%.
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)
 3 page
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STBV45D
Rev.E Mar.-2016
DATA SHEET
http://www.fsbrec.com
3 / 6
电参数曲线图 / Electrical Characteristic Curve
SOA(DC)
PC-TC
hFE-Ic
hFE-Ic
Vces-IC
Vbes-IC
tS-Ta
hFE-Ta
 4 page
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STBV45D
Rev.E Mar.-2016
DATA SHEET
http://www.fsbrec.com
4 / 6
外形尺寸图 / Package Dimensions
 5 page
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STBV45D
Rev.E Mar.-2016
DATA SHEET
http://www.fsbrec.com
5 / 6
印章说明 / Marking Instructions
说明:
BR:  

为公司代码
BV45D: 
为型号代码
****:

为生产批号代码,随生产批号变化。
Note:
BR:
Company Code.
BV45D:
Product Type.
****:
Lot No. Code,code change with Lot No.
BR
****
BV45D
 6 page
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STBV45D
Rev.E Mar.-2016
DATA SHEET
http://www.fsbrec.com
6 / 6
波峰焊温度曲线图(无铅) / Temperature Profile for Dip Soldering(Pb-Free)
说明:
Note:
1
、预热温度 25~150℃,时间 60~90sec;
1.Preheating:25~150
℃, Time:60~90sec.
2
、峰值温度 255±5℃,时间持续为 5±0.5sec;
2.Peak Temp.:255
±5℃, Duration:5±0.5sec.
3
、焊接制程冷却速度为 2~10℃/sec.
3. Cooling Speed: 2~10
℃/sec.
耐焊接热试验条件 /
Resistance to Soldering Heat Test Conditions
温度:270±5℃
时间:10±1 sec.
Temp:270±5℃
Time:10±1 sec
包装规格 / Packaging SPEC.
散件包装 / BULK
Package Type
封装形式
Units 包装数量
Dimension 包装尺寸 (unit:mm3)
Units/Bag
/袋
Bags/Inner Box
/盒
Units/Inner Box
/盒
Inner Boxes/Outer Box
/箱
Units/Outer Box
/箱
Bag 袋
Inner Box 盒
Outer Box 箱
TO-92
1,000
10
10,000
5
50,000
135×190
237×172×102
560×245×195
1,000
10
10,000
10
100,000
135×190
237×172×102
560×245×375
编带包装 / AMMO
Package Type
封装形式
Units 包装数量
Dimension 包装尺寸 (unit:mm3)
Units/tape
/纸带
Tape/Inner Box
纸带
/盒
Rows/Inner Box
纸带层
/盒
Inner Boxes/Outer Box
/箱
Units/Outer Box
/箱
Inner Box 盒
Outer Box 箱
TO-92
3,000
1
120
10
30,000
328×230×42
小箱
480×346×235,
大箱
547×407×268
使用说明 / Notices




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