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X0205MA 데이터시트(Datasheet) 1 Page - Foshan Blue Rocket Electronics Co.,Ltd.

부품명 X0205MA
상세내용  Thyristor in a TO-92 Plastic Package
PDF  6 Pages
Scroll/Zoom Zoom In 100% Zoom Out
제조사  FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]
홈페이지  http://www.fsbrec.com/
Logo 

   
 1 page
background image
X0205MA
Rev.F Mar.-2016
DATA SHEET
http://www.fsbrec.com
1 / 6
TO-92 塑封封装单向可控硅。Thyristor in a TO-92 Plastic Package.

该管的正向导通电压低和浪涌电流承受力高的特点,可控硅自身功耗低、可靠性高可在较差环境下工作。
these devices are optimized in forward voltage drop and inrush current capabilities, for reduced power
losses and high reliability in harsh environments.
X02 系列单向可控硅适合高灵敏控制应用,如:漏电保护器、低功率过压保护器、电容性的点火线路。
The X02 SCR series is suitable for all applications where the available gate current is limited ,such as
ground fault circuit interruptors, over voltage crowbar protection in low power supplies, capacitive
ignition circuits.

PIN1
:Anode
PIN 2
:Gate
PIN 3
:Cathode
放大及印章代码 / hFE Classifications & Marking
见印章说明。See Marking Instructions.
描述 / Descriptions
特征 / Features
用途 / Applications
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
1 23
 2 page
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X0205MA
Rev.F Mar.-2016
DATA SHEET
http://www.fsbrec.com
2 / 6
参数
Parameter
符号
Symbol
测试条件
Test Conditions
数值
Rating
单位
Unit
RMS on-state current
IT(RMS)
Tc=55℃
1.25
A
Repetitive peak off-state voltages
VDRM/VRRM
600
800
V
Average on-state current
IT(AV)
Tc=55℃
0.8
A
Non-repetitive peak on-state
current
ITSM
Tc=25℃
tp=8.3ms
25
A
tp=10ms
22.5
A
I2t for fusing
I2t
tp=10ms
Tc=25℃
2.5
A2S
Average gate power dissipation
PG(AV)
Tc=125℃
0.2
W
Peak gate current
IGM
tp=20µs
Tc=125℃
1.2
A
Critical rate of rise of off-state
voltage
dl/dt
F=60Hz
tr≤100ns
Tc=125℃
50
A/μs
Junction Temperature
Tj
-40~125
Storage Temperature Range
Tstg
-40~150
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Repetitive peak off-state
current
IDRM
VDRM=VRRM
RGK= 1KΩ
TC=25℃
5
μA
Repetitive peak off-state
current
IRRM
TC=125℃
500
Repetitive peak
on-state voltage
VTM
ITM=2.5A
tp=380µs
TC=25℃
1.45
V
Gate trigger current
IGT
VD=12V
RL=140Ω
20
50
μA
Holding current
IH
IT=50mA
RGK=1KΩ
5
mA
Latching current
IL
IG=1mA
RGK=1KΩ
6
mA
Gate trigger voltage
VGT
VD=12V
RL=140Ω
0.8
V
On-state voltage
VGD
VD=VDRM
RL=3.3KΩ
RGK=1KΩ
TC=125℃
0.1
V
Off-state leakage current
VRG
IRG=10μA
8
V
Critical rate of rise of off-state
voltage
dv/dt
VD=67%VRRM RGK=1KΩ
TC=110℃
15
V/μs
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)
 3 page
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X0205MA
Rev.F Mar.-2016
DATA SHEET
http://www.fsbrec.com
3 / 6
电参数曲线图 / Electrical Characteristic Curve
 4 page
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X0205MA
Rev.F Mar.-2016
DATA SHEET
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外形尺寸图 / Package Dimensions
 5 page
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X0205MA
Rev.F Mar.-2016
DATA SHEET
http://www.fsbrec.com
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印章说明 / Marking Instructions
说明:
BR:


为公司代码
X0205MA: 
为产品型号
****:


为生产批号代码,随生产批号变化。
Note:
BR:
Company Code.
X0205MA:
Product Type.
****:
Lot No. Code, code change with Lot No.
X0205MA
****
BR
 6 page
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X0205MA
Rev.F Mar.-2016
DATA SHEET
http://www.fsbrec.com
6 / 6
波峰焊温度曲线图(无铅) / Temperature Profile for Dip Soldering(Pb-Free)
说明:
Note:
1
、预热温度 25~150℃,时间 60~90sec;
1.Preheating:25~150
℃, Time:60~90sec.
2
、峰值温度 255±5℃,时间持续为 5±0.5sec;
2.Peak Temp.:255
±5℃, Duration:5±0.5sec.
3
、焊接制程冷却速度为 2~10℃/sec.
3. Cooling Speed: 2~10
℃/sec.
耐焊接热试验条件 /
Resistance to Soldering Heat Test Conditions
温度:270±5℃
时间:10±1 sec.
Temp.:270±5℃
Time:10±1 sec
包装规格 / Packaging SPEC.
散件包装 / BULK
Package Type
封装形式
Units 包装数量
Dimension 包装尺寸 (unit:mm3)
Units/Bag
/袋
Bags/Inner Box
/盒
Units/Inner Box
/盒
Inner Boxes/Outer Box
/箱
Units/Outer Box
/箱
Bag 袋
Inner Box 盒
Outer Box 箱
TO-92
1,000
10
10,000
5
50,000
135×190
237×172×102
560×245×195
1,000
10
10,000
10
100,000
135×190
237×172×102
560×245×375
编带包装 / AMMO
Package Type
封装形式
Units 包装数量
Dimension 包装尺寸 (unit:mm3)
Units/tape
/纸带
Tape/Inner Box
纸带
/盒
Rows/Inner Box
纸带层
/盒
Inner Boxes/Outer Box
/箱
Units/Outer Box
/箱
Inner Box 盒
Outer Box 箱
TO-92
3,000
1
120
10
30,000
328×230×42
小箱
480×346×235,
大箱
547×407×268
使用说明 / Notices




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