전자부품 데이터시트 검색엔진
Selected language     Korean  ▼
부품명
         상세내용
Preview PDF Download HTML-1page HTML-10pages

ST18ADN 데이터시트(Datasheet) 1 Page - Stanson Technology

부품명 ST18ADN
상세내용  N Channel Enhancement Mode MOSFET
PDF  7 Pages
Scroll/Zoom Zoom In 100% Zoom Out
제조사  STANSON [Stanson Technology]
홈페이지  http://www.stansontech.com
Logo 

   
 1 page
background image
ST18ADN
N Channel Enhancement Mode MOSFET
70A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
ST18ADN 2016 V1
DESCRIPTION
ST18ADN uses Trench MOSFET technology that is uniquely optimized to provide the
most efficient nigh frequency switching performance. It has been optimized for low
gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION
POWER PACK 5x6 (1212-8L)
D
D
D
D
S
S
S
G
Y:Year Code
A:Date Code
B:Package Code
C:Process Code
FEATURE
l
30V/30A, RDS(ON) = 6mΩ(Typ.)
@VGS = 10V
l
30V/15A, RDS(ON) = 7mΩ
@VGS = 4.5V
l
Super high density cell design for
extremely low RDS(ON)
l
Exceptional on-resistance and
maximum DC current capability
l
PPAK5x6 (1212-8L) package design
 2 page
background image
ST18ADN
N Channel Enhancement Mode MOSFET
70A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
ST18ADN 2016 V1
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
(TJ=150℃)
TA=25℃
TA=70℃
ID
35
17
A
Pulsed Drain Current
IDM
70
A
Continuous Source Current (Diode Conduction)
IS
110
A
Power Dissipation
TA=25℃
PD
87
W
Operation Junction Temperature
TJ
150
Storage Temperature Range
TSTG
-55/150
Thermal Resistance-Junction to Ambient
RθJA
62
/W
 3 page
background image
ST18ADN
N Channel Enhancement Mode MOSFET
70A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
ST18ADN 2016 V1
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Static
Drain-Source
Breakdown Voltage
V(BR)DSS
VGS=0V,ID=250uA
30
V
Gate Threshold
Voltage
VGS(th)
VDS=VGS,ID=250uA
1.2
2.5
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
±100
nA
Zero Gate Voltage
Drain Current
IDSS
VDS=24V,VGS=0V
1
uA
VDS=24V,VGS=0V
TJ=55℃
5
Drain-source On-
Resistance
RDS(on)
VGS=10V,ID=30A
VGS=4.5V,ID=15A
6.5
8.0
6.5
9.0
Forward
Transconductance
gfs
VDS=5V,ID=30A
43
S
Diode Forward Voltage
VSD
IS=1.0A,VGS=0V
1.0
V
Dynamic
Total Gate Charge
Qg
VDS=20V,VGS=4.5V
ID≡12A
32
nC
Gate-Source Charge
Qgs
6.1
Gate-Drain Charge
Qgd
13.8
Input Capacitance
Ciss
VDS =15V,VGS=0V
F=1MHz
3100
pF
Output Capacitance
Coss
400
Reverse
TransferCapacitance
Crss
315
Turn-On Time
td(on)
tr
VDD=15V,ID=20A
VGS=10V, RG=1.5Ω
11.8
nS
49
Turn-Off Time
td(off)
tf
35
7.8
 4 page
background image
ST18ADN
N Channel Enhancement Mode MOSFET
70A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
ST18ADN 2016 V1
TYPICAL CHARACTERICTICS (Tj=25℃ unless otherwise noted)
 5 page
background image
ST18ADN
N Channel Enhancement Mode MOSFET
70A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
ST18ADN 2016 V1
TYPICAL CHARACTERICTICS (Tj=25℃ unless otherwise noted)
 6 page
background image
ST18ADN
N Channel Enhancement Mode MOSFET
70A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
ST18ADN 2016 V1
TYPICAL CHARACTERICTICS (Tj=25℃ unless otherwise noted)
 7 page
background image
ST18ADN
N Channel Enhancement Mode MOSFET
70A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
ST18ADN 2016 V1
POWER PACKAGE 5x6 OUTLINE




Html 페이지

1  2  3  4  5  6  7 


데이터시트




링크 URL

ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ]  

Alldatasheet는?   |   광고문의    |   운영자에게 연락하기   |   개인정보취급방침   |   즐겨찾기   |   링크교환   |   제조사별 검색
All Rights Reserved© Alldatasheet.com 2003 - 2017    


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl