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STP2327 데이터시트(Datasheet) 1 Page - Stanson Technology

부품명 STP2327
상세내용  P Channel Enhancement Mode MOSFET
PDF  5 Pages
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제조사  STANSON [Stanson Technology]
홈페이지  http://www.stansontech.com
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 1 page
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STP2327
P Channel Enhancement Mode MOSFET
-1.5A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
STP2327 2013. Rev.1
DESCRIPTION
STP2327 is the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-6L
PART MARKING
Y: Year Code
A: date Code
FEATURE
l
-100V/-1.5.0A, RDS(ON) = 520m-ohm (Typ.)
@VGS = -10V
l
-100V/-0.5.0A, RDS(ON) = 600m-ohm
@VGS = -4.5V
l
Super high density cell design for
extremely low RDS(ON)
l
Exceptional on-resistance and maximum
DC current capability
l
SOT-23-6L package design
 2 page
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STP2327
P Channel Enhancement Mode MOSFET
-1.5A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
STP2327 2013. Rev.1
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
-100
V
Gate-Source Voltage
VGSS
±
20
V
Continuous Drain CurrentTJ=150℃)
TA=25℃
TA=70℃
ID
-1.5
-1.2
A
Pulsed Drain Current
IDM
-4.5
A
Continuous Source Current (Diode Conduction)
IS
-1.0
A
Power Dissipation
TA=25℃
TA=70℃
PD
1.25
0.8
W
Operation Junction Temperature
TJ
150
Storgae Temperature Range
TSTG
-55/150
Thermal Resistance-Junction to Ambient
RθJA
100
/W
 3 page
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STP2327
P Channel Enhancement Mode MOSFET
-1.5A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
STP2327 2013. Rev.1
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ
Max Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V,ID=-250uA
-100
V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250uA
-1.0
-2.5
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
±
100
nA
Zero Gate Voltage Drain
Current
IDSS
VDS=-80V,VGS=0V
-1
uA
VDS=-80V,VGS=0V
TJ=55℃
-5
Drain-source On-Resistance
RDS(on)
VGS=-10V,ID=-0.8A
VGS=-4.5V,ID=-0.4A
0.520
0.600
0.640
0.700
Ω
Forward Transconductance
gfs
VDS=-10V,ID=-1.0A
2.9
S
Diode Forward Voltage
VSD
IS=-1.0A,VGS=0V
-1.0
V
Dynamic
Total Gate Charge
Qg
VDS=-50V
VGS=-10V
ID≡-1.0A
10
nC
Gate-Source Charge
Qgs
1.75
Gate-Drain Charge
Qgd
1.25
Input Capacitance
Ciss
VDS=-15V
VGS=0V
F=1MHz
553
pF
Output Capacitance
Coss
29
Reverse Transfer
Capacitance
Crss
20
Turn-On Time
td(on)
tr
VDD=-50V
RL=3.3Ω
ID=-0.5A
VGS=-10V
RG=3.5Ω
2
nS
19
Turn-Off Time
td(off)
tf
20
19
 4 page
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STP2327
P Channel Enhancement Mode MOSFET
-1.5A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
STP2327 2013. Rev.1
TYPICAL CHARACTERISTICS
Fig 1 Output Characteristics
Fig. 2 On-Resistance vs Gate
Source Voltage
Fig 3 Source-Drain Forward Voltage
Fig. 4 Gate Charge
Fig. 5 Gate Voltage vs Junction temperature
Fig. 6 On-Resistance vs Junction
 5 page
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STP2327
P Channel Enhancement Mode MOSFET
-1.5A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
STP2327 2013. Rev.1
SOT-23-6L PACKAGE OUTLINE




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