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2SA854S 데이터시트(Datasheet) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

부품명 2SA854S
상세내용  TO-92S Plastic-Encapsulate Transistors
PDF  3 Pages
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제조사  JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]
홈페이지  http://www.cj-elec.com/index.asp
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 1 page
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TO – 92S
1. EMITTER
2. COLLECTOR
3. BASE
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
2SA854S
TRANSISTOR (PNP)
FEATURES
Large IC.
Low VCE(sat). Idea for Low-voltage Operation.
Complements the 2SC1741S.
MAXIMUM RATINGS (Ta=25
℃ unless otherwise noted)
ELECTRICAL CHARACTERISTICS (Ta=25
℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= -0.1mA,IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-32
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-0.1mA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-20V,IE=0
-1
μA
Emitter cut-off current
IEBO
VEB=-4V,IC=0
-1
μA
DC current gain
hFE
VCE=-3V, IC=-10mA
120
390
Collector-emitter saturation voltage
VCE(sat)
IC=-100mA,IB=-10mA
-0.4
V
Collector output capacitance
Cob
VCB=-10V,IE=0, f=1MHz
8
pF
Transition frequency
fT
VCE=-5V,IC=-20mA, f=100MHz
200
MHz
CLASSIFICATION OF hFE
RANK
Q
R
RANGE
120-270
180-390
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-32
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-0.5
A
PC
Collector Power Dissipation
200
mW
RθJA
Thermal Resistance From Junction To Ambient
625
℃/W
Tj
Junction Temperature
150
Tstg
Storage Temperature
-55~+150
JC T
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D,Jul,2016
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Symbol
Dimensions In Millimeters
Dimensions In Inches
Min.
Max.
Min.
Max.
A
1.420
1.620
0.056
0.064
A1
0.660
0.860
0.026
0.034
b
0.330
0.480
0.013
0.019
b1
0.400
0.510
0.016
0.020
c
0.330
0.510
0.013
0.020
D
3.900
4.100
0.154
0.161
D1
2.280
2.680
0.090
0.106
E
3.050
3.250
0.120
0.128
e
1.270 TYP.
0.050 TYP.
e1
2.440
2.640
0.096
0.104
L
15.100
15.500
0.594
0.610
θ
45° TYP.
45° TYP.
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