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STE250NS10 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 STE250NS10
상세설명  N-CHANNEL 100V - 0.0045 W - 220A ISOTOP STripFET POWER MOSFET
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STE250NS10 데이터시트(HTML) 3 Page - STMicroelectronics

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STE250NS10
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 50 V
ID = 125 A
RG = 4.7 Ω
VGS = 10 V
(Resistive Load, Figure 3)
110
380
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 50V ID= 220A VGS = 10V
900
160
330
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 50 V
ID = 125 A
RG = 4.7Ω,
VGS = 10 V
(Resistive Load, Figure 3)
1100
330
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp = 80 V
ID = 220 A
RG = 4.7Ω,
VGS = 10 V
(Inductive Load, Figure 5)
950
330
600
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
220
880
A
A
VSD (*)
Forward On Voltage
ISD = 220 A
VGS = 0
1.5
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 220 A
di/dt = 100A/µs
VDD = 30 V
Tj = 150°C
(see test circuit, Figure 5)
200
1.35
13.5
ns
µC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance


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