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TCMD4000 데이터시트(PDF) 3 Page - Vishay Siliconix |
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TCMD4000 데이터시트(HTML) 3 Page - Vishay Siliconix |
3 / 7 page TCMD1000 / TCMD4000 Document Number 83513 Rev. 1.6, 26-Oct-04 Vishay Semiconductors www.vishay.com 3 Current Transfer Ratio Switching Characteristics Typical Characteristics (Tamb = 25 °C unless otherwise specified) Parameter Test condition Part Symbol Min Typ. Max Unit IC/IF VCE = 2 V, IF = 1 mA TCMD1000 CTR 600 800 % TCMD4000 CTR 600 800 % Parameter Test condition Symbol Min Typ. Max Unit Rise time VCE = 2 V, IC =10 mA, RL = 100 Ω (see figure 1) tr 300 µs Turn-off time VCE = 2 V, IC =10 mA, RL = 100 Ω (see figure 1) toff 250 µs Figure 1. Test circuit, non-saturated operation RL 50 Ω Channel II Channel I IC = 10 mA; +VCC IF IF 0 RG = 50 Ω tp tp = 50 ms T = 0.01 Oscilloscope RI = 1 MΩ CI = 20 pF 14779 Figure 2. Switching Times tp t t 0 0 10% 90% 100% tr td ton ts tf toff IF IC 96 11698 tp pulse duration td delay time tr rise time ton (= td +tr) turn-on time ts storage time tf fall time toff (= ts +tf) turn-off time Figure 3. Forward Voltage vs. Ambient Temperature 0.8 0.9 1.0 1.1 1.2 1.3 0 20406080 100 Tamb – Ambient Temperature (°C ) 14389 IF=10mA Figure 4. Forward Current vs. Forward Voltage 0.1 1.0 10.0 100.0 1000.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF – Forward Voltage(V) 14390 |
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