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TPC6005 데이터시트(PDF) 1 Page - Toshiba Semiconductor |
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TPC6005 데이터시트(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page TPC6005 2001-12-17 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6005 Notebook PC Applications Portable Equipment Applications · Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) · High forward transfer admittance: |Yfs| = 10 S (typ.) · Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) · Enhancement-model: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 µA) Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kW) VDGR 30 V Gate-source voltage VGSS ±12 V DC (Note 1) ID 6 Drain current Pulse (Note 1) IDP 24 A Drain power dissipation (t = 5 s) (Note 2a) PD 2.2 W Drain power dissipation (t = 5 s) (Note 2b) PD 0.7 W Single pulse avalanche energy (Note 3) EAS 5.8 mJ Avalanche current IAR 3 A Repetitive avalanche energy (Note 4) EAR 0.22 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55 to 150 °C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Rth (ch-a) 56.8 °C/W Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Rth (ch-a) 178.5 °C/W Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next page. This transistor is an electrostatically sensitive device. Please handle it with caution. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3T1A Weight: 0.011 g (typ.) Circuit Configuration 6 4 1 2 3 5 Marking (Note 5) S 2 E |
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