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TSM088NA03CR 데이터시트(PDF) 3 Page - Taiwan Semiconductor Company, Ltd |
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TSM088NA03CR 데이터시트(HTML) 3 Page - Taiwan Semiconductor Company, Ltd |
3 / 6 page TSM088NA03CR Taiwan Semiconductor 3 Version: C1610 0.6 0.8 1 1.2 1.4 1.6 1.8 -75 -50 -25 0 25 50 75 100 125 150 0 8 16 24 32 40 0 1 2 3 4 5 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0 8 16 24 32 40 0 2 4 6 8 10 0 3 6 9 12 15 CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate-Source Voltage vs. Gate Charge On-Resistance vs. Junction Temperature On-Resistance vs. Gate-Source Voltage VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) ID, Drain Current (A) Qg, Gate Charge (nC) TJ, Junction Temperature (°C) 150℃ 25℃ VGS=10V VDS=15V ID=13A VGS=10V ID=13A VGS=4.5V 0 8 16 24 32 40 0 1 2 3 4 V GS=10V V GS=5V V GS=4.5V V GS=4V V GS=3.5V -55℃ VGS, Gate to Source Voltage (V) 0 0.01 0.02 0.03 0.04 0.05 0.06 3 4 5 6 7 8 9 10 I D=13A |
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