전자부품 데이터시트 검색엔진 |
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TSM120NA03CR 데이터시트(PDF) 3 Page - Taiwan Semiconductor Company, Ltd |
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TSM120NA03CR 데이터시트(HTML) 3 Page - Taiwan Semiconductor Company, Ltd |
3 / 6 page TSM120NA03CR Taiwan Semiconductor 3 Version: B1610 0 6 12 18 24 30 0 1 2 3 4 25℃ -55℃ 150℃ CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate-Source Voltage vs. Gate Charge On-Resistance vs. Junction Temperature On-Resistance vs. Gate-Source Voltage VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) ID, Drain Current (A) Qg, Gate Charge (nC) TJ, Junction Temperature (°C) VGS, Gate to Source Voltage (V) 0 6 12 18 24 30 0 1 2 3 4 V GS=10V V GS=7V V GS=5V V GS=4.5V V GS=4V V GS=3.5V V GS=3V 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0 6 12 18 24 30 V GS=10V V GS=4.5V 0 2 4 6 8 10 0 2 4 6 8 10 V DS=15V I D=11A 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -75 -50 -25 0 25 50 75 100 125 150 V GS=10V I D=11A 0 0.005 0.01 0.015 0.02 0.025 0.03 3 4 5 6 7 8 9 10 I D=11A |
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