SI2318DS datasheet(2/4 Pages) VISHAY

부품명	SI2318DS

상세설명	N-Channel 40-V (D-S) MOSFET

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Si2318DS

Vishay Siliconix

New Product

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Document Number: 72322

S-31731—Rev. A, 18-Aug-03

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

40

V

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

1

3

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 32 V, VGS = 0 V

0.5

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 32 V, VGS = 0 V, TJ = 55_C

10

mA

On-State Drain Currenta

ID(on)

VDS w 4.5 V, VGS = 10 V

6

A

Drain Source On Resistancea

rDS( )

VGS = 10 V, ID = 3.9 A

0.036

0.045

W

Drain-Source On-Resistancea

rDS(on)

VGS = 4.5 V, ID = 3.5 A

0.045

0.058

W

Forward Transconductancea

gfs

VDS = 10 V, ID = 3.9 A

11

S

Diode Forward Voltage

VSD

IS = 1.25 A, VGS = 0 V

0.8

1.2

V

Dynamicb

Total Gate Charge

Qg

10

15

Gate-Source Charge

Qgs

VDS = 20 V, VGS = 10 V, ID = 3.9 A

1.6

nC

Gate-Drain Charge

Qgd

DS

GS

D

2.1

Gate Resistance

Rg

1.8

W

Input Capacitance

Ciss

540

Output Capacitance

Coss

VDS = 20 V, VGS = 0 V, f = 1 MHz

80

pF

Reverse Transfer Capacitance

Crss

DS

GS

45

p

Switching

Turn-On Delay Time

td(on)

5

10

Rise Time

tr

VDD = 20 V, RL = 20 W

12

20

ns

Turn-Off Delay Time

td(off)

VDD = 20 V, RL = 20 W

ID ^ 1.0 A, VGEN = 10 V, RG = 6 W

20

30

ns

Fall-Time

tf

15

25

Notes

a.

Pulse test: PW v300 ms duty cycle v2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

0

4

8

12

16

20

02468

10

VGS = 10 thru 5 V

TC = 125_C

-55_C

4 V

25_C

Output Characteristics

Transfer Characteristics

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

3 V

1, 2 V

유사한 부품 번호 - SI2318DS

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI2318DS	194Kb / 8P	N-Channel 40-V (D-S) MOSFET Rev. B, 02-Feb-09
	SI2318DS	198Kb / 8P	N-Channel 40-V (D-S) MOSFET Rev. B, 02-Feb-09
	SI2318DS	160Kb / 7P	N-Channel 40-V (D-S) MOSFET 01-Jan-2022
VBsemi Electronics Co.,...	SI2318DS-T1-GE3	1Mb / 9P	N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI2318DS	194Kb / 8P	N-Channel 40-V (D-S) MOSFET Rev. B, 02-Feb-09

More results

유사한 설명 - SI2318DS

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SIRA58DP	409Kb / 13P	N-Channel 40 V (D-S) MOSFET Rev. A, 08-Feb-16
Vishay Siliconix	SUM90N04-3M3P	185Kb / 8P	N-Channel 40 V (D-S) MOSFET Rev. B, 02-Dec-13
Analog Power	AM2340N	326Kb / 5P	N-Channel 40-V (D-S) MOSFET
Analog Power	AM90N04-01P	315Kb / 5P	N-Channel 40-V (D-S) MOSFET
Vishay Siliconix	SI7156DP	108Kb / 7P	N-Channel 40-V (D-S) MOSFET Rev. B, 09-Feb-09
Vishay Siliconix	SISS10DN	330Kb / 9P	N-Channel 40 V (D-S) MOSFET Rev. A, 08-Feb-16
Analog Power	AM2344N	313Kb / 5P	N-Channel 40-V (D-S) MOSFET
Vishay Siliconix	SI2318CDS	236Kb / 10P	N-Channel 40 V (D-S) MOSFET Rev. A, 04-Oct-10
	SI4154DY	91Kb / 7P	N-Channel 40-V (D-S) MOSFET Rev. A, 01-Jun-09
	SI4446DY	265Kb / 9P	N-Channel 40-V (D-S) MOSFET Rev. B, 02-Mar-09

More results

SI2318DS 데이터시트(PDF) 2 Page - Vishay Siliconix

SI2318DS 데이터시트(HTML) 2 Page - Vishay Siliconix

유사한 부품 번호 - SI2318DS

유사한 설명 - SI2318DS

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