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TLP161G 데이터시트(PDF) 2 Page - Toshiba Semiconductor |
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TLP161G 데이터시트(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page TLP161G 2002-09-25 2 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current IF 50 mA Forward current derating (Ta ≥ 53°C) ∆IF / °C -0.7 mA / °C Peak forward current (100µs pulse, 100pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C Off -state output terminal voltage VDRM 400 V Ta=25°C 70 On -state RMS current Ta=70°C IT(RMS) 40 mA On -state current derating (Ta ≥ 25°C) ∆IT / °C -0.67 mA / °C Peak on -state current (100µs pulse, 120pps) ITP 2 A Peak nonrepetitive surge current (PW=10ms, DC=10%) ITSM 1.2 A Junction temperature Tj 115 °C Storage temperature range Tstg -55~125 °C Operating temperature range Topr -40~100 °C Lead soldering temperature (10s) Tsol 260 °C Isolation voltage (AC, 1min., R.H.≤ 60%) (Note) BVS 2500 Vrms (Note) Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4 and 6 shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VAC ― ― 120 Vac Forward current IF 15 20 25 mA Peak on -state current ITP ― ― 1 A Operating temperature Topr -25 ― 85 °C |
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