BCW65CLT1 datasheet(2/4 Pages) ONSEMI

부품명	BCW65CLT1

상세설명	General Purpose Transistor

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BCW65ALT1, BCW65CLT1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector − Emitter Breakdown Voltage

(IC = 10 mAdc, IB = 0)

V(BR)CEO

32

−

Vdc

Collector − Emitter Breakdown Voltage

(IC = 10 mAdc, VEB = 0)

V(BR)CES

60

−

Vdc

Emitter − Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

5.0

−

Vdc

Collector Cutoff Current

(VCE = 32 Vdc, IE = 0)

(VCE = 32 Vdc, IE = 0, TA = 150°C)

ICES

−

20

nAdc

mAdc

Emitter Cutoff Current

(VEB = 4.0 Vdc, IC = 0)

IEBO

−

20

nAdc

ON CHARACTERISTICS

DC Current Gain

BCW65ALT1

(IC = 100 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 100 mAdc, VCE = 1.0 Vdc)

(IC = 500 mAdc, VCE = 2.0 Vdc)

hFE

35

75

100

35

−

250

−

DC Current Gain

BCW65CLT1

(IC = 100 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 100 mAdc, VCE = 1.0 Vdc)

(IC = 500 mAdc, VCE = 2.0 Vdc)

hFE

80

180

250

100

−

630

−

Collector − Emitter Saturation Voltage

(IC = 500 mAdc, IB = 50 mAdc)

(IC = 100 mAdc, IB = 10 mAdc)

VCE(sat)

−

0.7

0.3

−

Vdc

Base − Emitter Saturation Voltage

(IC = 500 mAdc, IB = 50 mAdc)

VBE(sat)

−

2.0

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current − Gain — Bandwidth Product

(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)

fT

100

−

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

−

12

pF

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Cibo

−

80

pF

Noise Figure

(VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 1.0 kW, f = 1.0 kHz, BW = 200 Hz)

NF

−

10

dB

SWITCHING CHARACTERISTICS

Turn−On Time

(IB1 = IB2 = 15 mAdc)

ton

−

100

ns

Turn−Off Time

(IC = 150 mAdc, RL = 150 W)

toff

−

400

ns

유사한 부품 번호 - BCW65CLT1

제조업체	부품명	데이터시트	상세설명
ON Semiconductor	BCW65CLT1G	115Kb / 3P	General Purpose Transistor August, 2009 ??Rev. 5
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	BCW65CLT1G.	115Kb / 3P	General Purpose Transistor August, 2009 ??Rev. 5

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