전자부품 데이터시트 검색엔진 |
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2SD0874 데이터시트(PDF) 1 Page - Panasonic Semiconductor |
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2SD0874 데이터시트(HTML) 1 Page - Panasonic Semiconductor |
1 / 3 page Transistors 1 Publication date: November 2002 SJC00197CED 2SD0874, 2SD0874A (2SD874, 2SD874A) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0766 (2SB766) and 2SB0766A (2SB766A) ■ Features • Large collector power dissipation P C • Low collector-emitter saturation voltage V CE(sat) • Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing ■ Absolute Maximum Ratings T a = 25°C ■ Electrical Characteristics T a = 25°C ± 3°C 4.5±0.1 3.0±0.15 45˚ 1.6±0.2 1.5±0.1 0.5±0.08 0.4±0.04 0.4±0.08 12 3 1.5±0.1 3˚ Unit: mm 1: Base 2: Collector 3: Emitter MiniP3-F1 Package Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank Q R S hFE1 85 to 170 120 to 240 170 to 340 Marking Symbol: • 2SD0874: Z • 2SD0874A: Y Parameter Symbol Rating Unit Collector-base voltage 2SD0874 VCBO 30 V (Emitter open) 2SD0874A 60 Collector-emitter voltage 2SD0874 VCEO 25 V (Base open) 2SD0874A 50 Emitter-base voltage (Collector open) VEBO 5V Collector current IC 1A Peak collector current ICP 1.5 A Collector power dissipation * PC 1W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage 2SD0874 VCBO IC = 10 µA, IE = 030 V (Emitter open) 2SD0874A 60 Collector-emitter voltage 2SD0874 VCEO IC = 2 mA, IB = 025 V (Base open) 2SD0874A 50 Emitter-base voltage (Collector open) VEBO IE = 10 µA, I C = 05 V Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 µA Forward current transfer ratio * 1 hFE1 * 2 VCE = 10 V, IC = 500 mA 85 340 hFE2 VCE = 5 V, I C = 1 A 50 Collector-emitter saturation voltage * 1 VCE(sat) IC = 500 mA, IB = 50 mA 0.2 0.4 V Base-emitter saturation voltage * 1 VBE(sat) IC = 500 mA, IB = 50 mA 0.85 1.2 V Transition frequency fT VCB = 10 V, I E = −50 mA, f = 200 MHz 200 MHz Collector output capacitance Cob VCB = 10 V, I E = 0, f = 1 MHz 20 pF (Common base, input open circuited) Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion Note) The part numbers in the parenthesis show conventional part number. |
유사한 부품 번호 - 2SD0874 |
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유사한 설명 - 2SD0874 |
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