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KTX511T 데이터시트(Datasheet) 2 Page - KEC(Korea Electronics)

부품명 KTX511T
상세내용  EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE
PDF  5 Pages
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제조사  KEC [KEC(Korea Electronics)]
홈페이지  http://www.keccorp.com
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 2 page
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2002. 1. 24
2/5
KTX511T
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=-12V, IE=0
-
-
-0.1
A
Emitter Cut-off Current
IEBO
VEB=-4V, IC=0
-
-
-0.1
A
Collector-Base Breakdown Voltage
V(BR)CBO
IC=-10 A, IE=0
20
-
-
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=-1mA, IB=0
20
-
-
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE=-10 A, IC=0
-5
-
-
V
Collector-Emitter Saturation Voltage
VCE(sat)
IC=-750mA, IB=-15mA
-
-120
-180
mV
IC=-1.5A, IB=-30mA
-
-210
-320
mV
Base-Emitter Saturation Voltage
VBE(sat)
IC=-750mA, IB=-15mA
-
-0.85
-1.2
V
DC Current Gain
hFE
VCE=-2V, IC=-100mA
200
-
560
Transition Frequency
fT
VCE=-2V, IC=-300mA
-
210
-
MHz
Collector Output Capacitance
Cob
VCB=-10V, f=1MHz
-
30
-
pF
Swiitching
Time
Turn-On Time
ton
-
50
-
nS
Storage Time
tstg
-
90
-
Fall Time
tf
-
15
-
Transistor Q1
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Reverse Voltage
VR
IR=1mA
30
-
-
V
Forward Voltage
VF
IF=0.7A
-
-
0.55
V
Reverse Current
IR
VR=30V
80
A
Total Capacitance
CT
VR=0V, f=1MHz
-
190
-
pF
Reverse Recover Time
trr
IF=IR=100mA
-
7.5
-
ns
Diode (SBD) D1
IB1
B2
I
INPUT
OUTPUT
50
220
µF
PW=20
µs
DC 1%
470
µF
R
V
B
R
L
R
BE
V
=5V
CC
V
=-5V
-20I =20I =I =-750mA
B1
B2 C
<
=




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