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SI7425DN-T1-E3 데이터시트(PDF) 2 Page - Vishay Siliconix |
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SI7425DN-T1-E3 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 5 page Si7425DN Vishay Siliconix New Product www.vishay.com 2 Document Number: 72400 S-32411—Rev. B, 24-Nov-03 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −300 mA −0.40 −1.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = −12 V, VGS = 0 V −1 mA Zero Gate Voltage Drain Current IDSS VDS = −12 V, VGS = 0 V, TJ = 85_C −5 mA On-State Drain Currenta ID(on) VDS v −5 V, VGS = −4.5 V −25 A VGS = −4.5 V, ID = −12.6 A 0.013 0.016 Drain-Source On-State Resistancea rDS(on) VGS = −2.5 V, ID = −10.8 A 0.017 0.022 W DS(on) VGS = −1.8 V, ID = −3.5 A 0.023 0.029 Forward Transconductancea gfs VDS = −6 V, ID = −12.6 A 38 S Diode Forward Voltagea VSD IS = −3.0 A, VGS = 0 V −0.7 −1.2 V Dynamicb Total Gate Charge Qg 26 39 Gate-Source Charge Qgs VDS = −6 V, VGS = −4.5 V, ID = −12.6 A 4.1 nC Gate-Drain Charge Qgd 7.0 Gate Resistance Rg f = 1 MHz 5.0 W Turn-On Delay Time td(on) 30 45 Rise Time tr VDD = −6 V, RL = 6 W 55 75 Turn-Off Delay Time td(off) VDD = −6 V, RL = 6 W ID ^ −1 A, VGEN = −4.5 V, RG = 6 W 130 260 ns Fall Time tf 100 225 Source-Drain Reverse Recovery Time trr IF = −3.2 A, di/dt = 100 A/ms 52 80 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 5 10 15 20 25 0.0 0.4 0.8 1.2 1.6 2.0 0 5 10 15 20 25 0 1234 5 VGS = 5 thru 2 V 25_C TC = 125_C 1 V −55_C 1.5 V Output Characteristics Transfer Characteristics VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) |
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