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TC58FVB160AXB 데이터시트(PDF) 6 Page - Toshiba Semiconductor |
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TC58FVB160AXB 데이터시트(HTML) 6 Page - Toshiba Semiconductor |
6 / 41 page TC58FVT160/B160AFT/AXB-70,-10 2002-08-06 6/41 OPERATION MODES In addition to the Read, Write and Erase Modes, the TC58FVT160/B160A features many functions including block protection and data polling. When incorporating the device into a deign, please refer to the timing charts and flowcharts in combination with the description below. READ MODE To read data from the memory cell array, set the device to Read Mode. In Read Mode the device can perform high-speed random access as asynchronous ROM. The device is automatically set to Read Mode immediately after power-on or on completion of automatic operation. A software reset releases ID Read Mode and the lock state which the device enters if automatic operation ends abnormally, and sets the device to Read Mode. A hardware reset terminates operation of the device and resets it to Read Mode. When reading data without changing the address immediately after power-on, either input a hardware Reset or change CE from H to L. ID Read Mode ID Read Mode is used to read the device maker code and device code. The mode is useful in that it allows EPROM programmers to identify the device type automatically. ID read can be executed in two ways, as follows: (1) Applying VID to A9 This method is used mainly by EPROM programmers. Applying VID to A9 sets the device to ID Read Mode, outputting the maker code from address 00H and the device code from address 01H. Releasing VID from A9 returns the device to Read Mode. (2) Input command sequence Inputting an ID Read command sets to ID Read Mode. The maker code is output from address 00; the device code is output from address 01. Inputting a Reset command releases ID Read Mode and returns the device to Read Mode. Access time in ID Read Mode is the same as that in Read Mode. For a list of the codes, please refer to the ID Code Table. Standby Mode There are two ways to put the device into Standby Mode. (1) Control using CE and RESET With the device in Read Mode, input VDD ± 0.3 V to CE and RESET . The device will enter Standby Mode and the current will be reduced to the standby current (IDDS1). (2) Control using RESET only With the device in Read Mode, input VSS ± 0.3 V to RESET . The device will enter Standby Mode and the current will be reduced to the standby current (IDDS1). In Standby Mode DQ is put in High-Impedance state. Auto-Sleep Mode This function suppresses power dissipation during reading. If the address input does not change for 150 ns, the device will automatically enter Sleep Mode and the current will be reduced to the standby current (IDDS2). Because the output data is latched, data is output in Sleep Mode. When the address is changed, Sleep Mode is automatically released, and data from the new address is output. |
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