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KTX321U 데이터시트(Datasheet) 2 Page - KEC(Korea Electronics)

부품명 KTX321U
상세내용  EPITAXIAL PLANAR PNP TRANSISTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR
PDF  6 Pages
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제조사  KEC [KEC(Korea Electronics)]
홈페이지  http://www.keccorp.com
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KTX321U
Revision No : 0
2003. 11. 20
2/6
Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )
Q2 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=-15V, IE=0
-
-
-100
nA
Emitter Cut-off Current
IEBO
VEB=-6V, IC=0
-
-
-100
nA
Collector-Base Breakdown Voltage
V(BR)CBO
IC=-10 A
-15
-
-
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=-1mA
-12
-
-
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE=-10 A
-6
-
-
V
DC Current Gain
hFE
VCE=-2V, IC=-10mA
270
-
680
-
Collector-Emitter Saturation Voltage
VCE(sat)
IC=-200mA, IB=-10mA
-
-100
-250
mV
Transition Frequency
fT
VCE=-2V, IC=-10mA, fT=100MHz
-
260
-
MHz
Collector Output Capacitance
Cob
VCB=-10V, IE=0, f=1MHz
-
6.5
-
pF
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Gate Leakage Current
IGSS
VGS= 20V, VDS=0V
-
-
1
A
Drain-Source Breakdown Voltage
V(BR)DSS
ID=100 A, VGS=0V
30
-
-
V
Drain Cut-off Current
IDSS
VDS=30V, VGS=0V
-
-
1
A
Gate Threshold Voltage
Vth
VDS=3V, ID=0.1mA
0.5
-
1.5
V
Forward Transfer Admittance
|Yfs|
VDS=3V, ID=10mA
25
-
-
mS
Drain-Source ON Resistance
RDS(ON)
ID=10mA, VGS=2.5V
-
4
7
Input Capacitance
Ciss
VDS=3V, VGS=0V, f=1MHz
-
8.5
-
pF
Reverse Transfer Capacitance
Crss
VDS=3V, VGS=0V, f=1MHz
-
3.3
-
pF
Output Capacitance
Coss
VDS=3V, VGS=0V, f=1MHz
-
9.3
-
pF
Switching Time
Turn-on Time
ton
VDD=5V, ID=10mA, VGS=0 5V
-
50
-
nS
Turn-off Time
toff
-
160
-
nS




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