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NCV47821 데이터시트(PDF) 5 Page - ON Semiconductor |
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NCV47821 데이터시트(HTML) 5 Page - ON Semiconductor |
5 / 15 page NCV47821 www.onsemi.com 5 Table 6. ELECTRICAL CHARACTERISTICS Vin = 13.5 V, VEN1,2 = 3.3 V, VDE = 0 V, RCSO1,2 = 0 W, CCSO1,2 = 1 mF, Cin = 1 mF, Cout1,2 = 10 mF, Min and Max values are valid for temperature range −40°C v TJ v +150°C unless noted otherwise and are guaranteed by test, design or statistical correlation. Typical values are referenced to TJ = 25°C (Note 8) Parameter Test Conditions Symbol Min Typ Max Unit REGULATOR OUTPUTS Output Voltage (Accuracy %) (Note 9) Vin = Vin_min to 40 V Iout1,2 = 5 mA to 200 mA Vout1,2 −3 − +3 % Line Regulation (Note 9) Vin = Vin_min to (Vout_nom1,2 + 20 V) Iout1,2 = 5 mA Regline1,2 − 0.1 1.0 % Load Regulation Vin = (Vout_nom1,2 + 8.5 V) Iout1,2 = 5 mA to 200 mA Regload1,2 − 0.4 1.4 % Dropout Voltage (Note 10) Vout_nom1,2 = 5 V, Iout1,2 = 200 mA VDO1,2 = Vin − Vout1,2 VDO1,2 − 250 500 mV DISABLE AND QUIESCENT CURRENTS Disable Current VEN1,2 = 0 V, Vout_nom1,2 = 5 V, −40 °C v TJ v +125°C IDIS − 0.1 10 mA Quiescent Current, Iq = Iin − (Iout1 +Iout2) Iout1 = Iout2 = 500 mA, Vin = (Vout_nom + 8.5 V) Iq − 0.6 1.0 mA Quiescent Current, Iq = Iin – (Iout1 +Iout2) Iout1 = Iout2 = 200 mA, Vin = (Vout_nom + 8.5 V) Iq − 15.5 25 mA CURRENT LIMIT PROTECTION Current Limit Vout1,2 = 0.9 x Vout_nom1,2 Vin = (Vout_nom1,2 + 8.5 V) ILIM1,2 300 − − mA PSRR & NOISE Power Supply Ripple Rejection (Note 11) f = 100 Hz, 0.5 Vp−p1,2 PSRR1,2 − 75 − dB Output Noise Voltage (Note 11) f = 10 Hz to 100 kHz, Cb1,2 = 10 nF Vn1,2 − 137 − mVrms ENABLE Enable Input Threshold Voltage Logic Low (OFF) Logic High (ON) Vout1,2 v 0.1 V Vout1,2 w 0.9 x Vout_nom1,2 (Vout_nom1,2 = 5 V) Vth(EN1,2) 0.99 − 1.8 1.9 − 2.31 V Enable Input Current VEN1,2 = 3.3 V, Vout_nom1,2 = 5 V IEN1,2 2 8 20 mA Turn On Time from Enable ON to 90 % of Vout Iout1,2 = 100 mA, Cb1,2 = 10 nF, Rn1 = 82 kW, Rn2 = 27 kW ton − 1.7 − ms OUTPUT CURRENT SENSE CSO Voltage Level at Current Limit Vout1,2 = 0.9 x Vout_nom1,2, (Vout_nom1,2 = 5 V) RCSO1,2 = 1 kW VCSO_Ilim1,2 2.448 (−4%) 2.55 2.652 (+4%) V CSO Transient Voltage Level CCSO1,2 = 4.7 mF, RCSO1,2 = 1 kW Iout1,2 pulse from 10 mA to 300 mA, tr = 1 ms VCSO1,2 − − 3.3 V Output Current to CSO Current Ratio (Note 11, 12) VCSO1,2 = 2 V, Iout1,2 = 1 mA to 10 mA (Vout_nom1,2 = 5 V) Iout1,2/ ICSO1,2 − (−5%) 98 − (+5%) − Output Current to CSO Current Ratio (Note 12) VCSO1,2 = 2 V, Iout1,2 = 10 mA to 300 mA (Vout_nom1,2 = 5 V) Iout1,2/ ICSO1,2 − (−5%) 100 − (+5%) − CSO Current at no Load Current VCSO1,2 = 0 V, Iout1,2 = 0 mA, (Vout_nom1,2 = 5 V) ICSO_off1,2 − − 10 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 8. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at TA [ TJ. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 9. Minimum input voltage Vin_min is 4.4 V or (Vout_nom1,2 + 1 V) whichever is higher. Vout_nom1,2 measured at ADJ1,2 pin due to excluding Rn1 and Rn2 accuracy. 10. Measured when the output voltage Vout1,2 has dropped by 2% of Vout_nom1,2 from the nominal valued obtained at Vin = Vout1,2 + 8.5 V. 11. Values based on design and/or characterization. 12. Not guaranteed in dropout. |
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