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IRFW530A 데이터시트(Datasheet) 4 Page - Fairchild Semiconductor

부품명 IRFW530A
상세내용  Advanced Power MOSFET
PDF  7 Pages
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제조사  FAIRCHILD [Fairchild Semiconductor]
홈페이지  http://www.fairchildsemi.com
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 4 page
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N-CHANNEL
POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
Fig 11. Thermal Response
Fig 10. Max. Drain Current vs. Case Temperature
Fig 9. Max. Safe Operating Area
P
DM
t
1
t
2
IRFW/I530A
-75
-50
-25
0
25
50
75
100
125
150
175
200
0.8
0.9
1.0
1.1
1.2
@ Notes :
1. V
GS
= 0 V
2. I
D
= 250
µA
T
J
, Junction Temperature [
oC]
-75
-50
-25
0
25
50
75
100
125
150
175
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
@ Notes :
1. V
GS
= 10 V
2. I
D
= 7.0 A
T
J
, Junction Temperature [
oC]
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10
µs
DC
100
µs
1 ms
10 ms
@ Notes :
1. T
C
= 25
oC
2. T
J
= 175
oC
3. Single Pulse
Operation in This Area
is Limited by R
DS(on)
V
DS
, Drain-Source Voltage [V]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-1
10
0
single pulse
0.2
0.1
0.01
0.02
0.05
D=0.5
@ Notes :
1. Z
θ JC
(t)=2.74
o C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
-T
C
=P
DM
*ZθJC(t)
t
1
, Square Wave Pulse Duration
[sec]
25
50
75
100
125
150
175
0
3
6
9
12
15
T
c
, Case Temperature [
oC]




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