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KTX512T 데이터시트(Datasheet) 1 Page - KEC(Korea Electronics)

부품명 KTX512T
상세내용  EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE
PDF  5 Pages
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제조사  KEC [KEC(Korea Electronics)]
홈페이지  http://www.keccorp.com
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2002. 1. 24
1/5
SEMICONDUCTOR
TECHNICAL DATA
KTX512T
EPITAXIAL PLANAR PNP TRANSISTOR
SCHOTTKY BARRIER TYPE DIODE
Revision No : 1
DC/DC CONVERTER APPLICATIONS.
FEATURES
Composite type with a PNP transistor and a Schottky barrier diode
contained in one package facilitating high-density mounting.
The KTX512T is formed with two chips, one being equivalent to
the KTA1535T and the other the KDR411S, encapsulated in one packages.
Ultrasmall package facilitates miniaturization in end products
(mounting height 0.7 ).
DIM MILLIMETERS
A
B
D
E
TS6
2.9 0.2
1.6+0.2/-0.1
0.70 0.05
0.4 0.1
2.8+0.2/-0.3
1.9 0.2
0.95
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
C
F
G
H
I
J
K0.60
L0.55
K
K
B
E
H
J
J
2
3
5
16
4
+_
+_
+_
+_
+_
1. Q EMITTER
2. Q BASE
3. D ANODE
4. Q , D COMMON (COLLECTOR, CATHODE)
5. Q , D COMMON (COLLECTOR, CATHODE)
6. Q , D COMMON (COLLECTOR, CATHODE)
1
1
1
1
1
11
11
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-20
V
Collector-Emitter Voltage
VCEO
-20
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
DC
IC
-3
A
Pulse
ICP
-5
A
Base Current
IB
600
mA
Collector Power Dissipation
PC *
0.9
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 150
* Package mounted on a ceramic board (600
0.8 )
12
3
6
54
Q1
D1
EQUIVALENT CIRCUIT (TOP VIEW)
Type Name
Marking
Lot No.
D B
12
3
65
4
MAXIMUM RATING (Ta=25 )
Transistor Q1
CHARACTERISTIC
SYMBOL
RATING
UNIT
Peak Reverse Voltage
VRRM
40
V
DC Reverse Voltage
VR
20
V
Average Output Current
ID
0.5
A
Peak Forward Surge Current
IFSM
3
A
Junction Temperature
Tj
125
Storage Temperature Range
Tstg
-40 125
Diode (SBD) D1




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