전자부품 데이터시트 검색엔진 |
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FQP4N90C 데이터시트(PDF) 3 Page - Fairchild Semiconductor |
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FQP4N90C 데이터시트(HTML) 3 Page - Fairchild Semiconductor |
3 / 10 page Rev. A, June 2003 ©2003 Fairchild Semiconductor Corporation 024 68 2 4 6 8 10 V GS = 20V V GS = 10V ※ Note : T J = 25 ℃ I D, Drain Current [A] 10 -1 10 0 10 1 0 200 400 600 800 1000 1200 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd ※ Notes ; 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] 0 5 10 15 20 0 2 4 6 8 10 12 V DS = 450V V DS = 180V V DS = 720V ※ Note : I D = 4A Q G, Total Gate Charge [nC] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150℃ ※ Notes : 1. V GS = 0V 2. 250μ s Pulse Test 25℃ V SD, Source-Drain voltage [V] 24 6 8 10 10 -1 10 0 10 1 V GS, Gate-Source Voltage [V] 150 oC 25 oC -55 oC ※ Notes : 1. V DS = 50V 2. 250μ s Pulse Test Typical Characteristics Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ※ Notes : 1. 250μ s Pulse Test 2. T C = 25℃ V DS, Drain-Source Voltage [V] |
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