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IKB06N60T 데이터시트(Datasheet) 4 Page - List of Unclassifed Manufacturers

부품명 IKB06N60T
상세내용  Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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IKB06N60T
TrenchStop series
IKP06N60T
^
Power Semiconductors
4
Rev. 2 Oct-04
Switching Characteristic, Inductive Load, at Tj=175
°C
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
td(on)
-
9
-
Rise time
tr
-
8
-
Turn-off delay time
td(off)
-
165
-
Fall time
tf
-
84
-
ns
Turn-on energy
Eon
-
0.14
-
Turn-off energy
Eoff
-
0.18
-
Total switching energy
Ets
Tj=175
°C,
VCC=400V,IC=6A,
VGE=0/15V,
RG= 23
Lσ
1) =60nH,
Cσ
1) =40pF
Energy losses include
“tail” and diode
reverse recovery.
-
0.335
-
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
-
180
-
ns
Diode reverse recovery charge
Qrr
-
500
-
nC
Diode peak reverse recovery current
Irrm
-
7.6
-
A
Diode peak rate of fall of reverse
recovery current during tb
dirr/dt
Tj=175
°C
VR=400V, IF=6A,
diF/dt=550A/
µs
-
285
-
A/
µs
1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.




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