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ST2052BD 데이터시트(PDF) 4 Page - STMicroelectronics |
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ST2052BD 데이터시트(HTML) 4 Page - STMicroelectronics |
4 / 9 page ST2052 4/9 Table 6: Enable Input ENx Characteristics (VI = 5.5V, IO = rated current, VIEN =VI, TJ = 25°C, unless otherwise specified.) (See Note 1) Table 7: Current Limit Characteristics (VI = 5.5V, IO = rated current, VIEN =VI, TJ = 25°C, unless other- wise specified.) (See Note 1) Table 8: Supply Current Characteristics (VI = 5.5V, IO = rated current, VIEN =VI, TJ = 25°C, unless oth- erwise specified.) (See Note 1) Table 9: Undervoltage Characteristics (VI = 5.5V, IO = rated current, VIEN =VI, TJ = 25°C, unless other- wise specified.) (See Note 1) Table 10: Overcurrent (OC) Characteristics (VI = 5.5V, IO = rated current, VIEN =VI, TJ = 25°C, unless otherwise specified.) (See Note 1) Note 1: Pulse testing techniques maintain junction temperature close to ambient temperature: thermal effect must be takes into account sep- arately. Note 2: Specified by design, not production tested. Note 3: Guaranteed by design. Symbol Parameter Test Conditions Min. Typ. Max. Unit VIH High level Input Voltage VI =2.7V to 5.5V 2 V VIL Low level Input Voltage VI =4.5V to 5.5V 0.8 V VI =2.7V to 4.5V 0.4 II Input Current VIENX = VI or 0V -0.5 0.5 µA ton Turn-on Time RL=10Ω CL=100µF20 ms toff Turn-off Time RL=10Ω CL=100µF40 ms Symbol Parameter Test Conditions Min. Typ. Max. Unit IOS Short Circuit Output Current VI =5V, OUT connected to GND, device enabled into short circuit 0.711.3 A Symbol Parameter Test Conditions Min. Typ. Max. Unit ISOL Current Low Level Output VIENX = 0, No Load, 0.025 1 µA VIENX = 0, No Load, TJ=-40 to 125°C 10 ISOH Current Low High Output VIENX = VI, No Load, 70 90 µA VIENX = VI, No Load, TJ=-40 to 125°C 100 IL Output Leakage Current VIENX = 0, Output Connected to GND, TJ=-40 to 125°C 10 µA Symbol Parameter Test Conditions Min. Typ. Max. Unit VIL Low Level Input Voltage 2 2.5 V VHYS Hysteresys 100 mV Symbol Parameter Test Conditions Min. Typ. Max. Unit ISINK Sink Current VO =5V 10 mA VO Output Low Voltage IO =5mA 0.5 V IOFF OFF-State Current VO =5V VO =3.3V 1 µA TFB Fault-Blanking period VI =5.5V, TJ=25°C (See Note 2 and 3) 2 10 ms |
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