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2SK3116-ZJ 데이터시트(PDF) 1 Page - NEC |
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2SK3116-ZJ 데이터시트(HTML) 1 Page - NEC |
1 / 8 page © 1998 MOS FIELD EFFECT TRANSISTOR 2SK3116 SWITCHING N-CHANNEL POWER MOS FET Document No. D13339EJ2V0DS00 (2nd edition) Date Published May 2002 NS CP (K) Printed in Japan DATA SHEET The mark 5 shows major revised points. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. DESCRIPTION The 2SK3116 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES •Low gate charge QG = 26 nC TYP. (ID = 7.5 A, VDD = 450 V, VGS = 10 V) •Gate voltage rating ±30 V •Low on-state resistance RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.75 A) •Avalanche capability ratings ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 600 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current (DC) ID(DC) ±7.5 A Drain Current (pulse) Note1 ID(pulse) ±30 A Total Power Dissipation (TA = 25°C) PT1 1.5 W Total Power Dissipation (TC = 25°C) PT2 70 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Single Avalanche Current Note2 IAS 7.5 A Single Avalanche Energy Note2 EAS 37.5 mJ Diode Recovery dv/dt Note3 dv/dt 3.5 V/ns Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω , VGS = 20 → 0 V 3. IF ≤ 3.0 A, Vclamp = 600 V, di/dt ≤ 100 A/ µs, TA = 25°C ORDERING INFORMATION PART NUMBER PACKAGE 2SK3116 TO-220AB 2SK3116-S TO-262 2SK3116-ZJ TO-263 |
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