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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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FDD2582 데이터시트(PDF) 2 Page - Fairchild Semiconductor |
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FDD2582 데이터시트(HTML) 2 Page - Fairchild Semiconductor |
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2 / 11 page  ©2002 Fairchild Semiconductor Corporation FDD2582 Rev. B Package Marking and Ordering Information Electrical Characteristics T C = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Resistive Switching Characteristics (V GS = 10V) Drain-Source Diode Characteristics Notes: 1: Starting TJ = 25°C, L = 1.17 mH, IAS = 10A. Device Marking Device Package Reel Size Tape Width Quantity FDD2582 FDD2582 TO-252AA 330mm 16mm 2500 units Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 150 - - V IDSS Zero Gate Voltage Drain Current VDS = 120V - - 1 µA VGS = 0V TC = 150 oC- - 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2 - 4 V rDS(ON) Drain to Source On Resistance ID = 7A, VGS = 10V - 0.058 0.066 Ω ID = 4A, VGS = 6V, - 0.066 0.099 ID = 7A, VGS = 10V, TC = 175 oC - 0.151 0.172 CISS Input Capacitance VDS = 25V, VGS = 0V, f = 1MHz -1295 - pF COSS Output Capacitance - 145 - pF CRSS Reverse Transfer Capacitance - 30 - pF Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V VDD = 75V ID = 7A Ig = 1.0mA -19 25 nC Qg(TH) Threshold Gate Charge VGS = 0V to 2V - 2.4 3.2 nC Qgs Gate to Source Gate Charge - 6.2 - nC Qgs2 Gate Charge Threshold to Plateau - 3.8 - nC Qgd Gate to Drain “Miller” Charge - 4.2 - nC tON Turn-On Time VDD = 75V, ID = 7A VGS = 10V, RGS = 16Ω -- 41 ns td(ON) Turn-On Delay Time - 8 - ns tr Rise Time - 19 - ns td(OFF) Turn-Off Delay Time - 32 - ns tf Fall Time - 19 - ns tOFF Turn-Off Time - - 77 ns VSD Source to Drain Diode Voltage ISD = 7A - - 1.25 V ISD = 4A - - 1.0 V trr Reverse Recovery Time ISD = 7A, dISD/dt = 100A/µs- - 67 ns QRR Reverse Recovered Charge ISD = 7A, dISD/dt = 100A/µs - - 134 nC |
유사한 부품 번호 - FDD2582 |
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유사한 설명 - FDD2582 |
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