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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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INA819 데이터시트(PDF) 6 Page - Texas Instruments |
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INA819 데이터시트(HTML) 6 Page - Texas Instruments |
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6 / 43 page  6 INA819 SBOS959 – DECEMBER 2018 www.ti.com Product Folder Links: INA819 Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated (1) Total offset, referred-to-input (RTI): VOS = (VOSI) + (VOSO / G). (2) Offset drifts are uncorrelated. Input-referred offset drift is calculated using: ΔVOS(RTI) = √[ΔVOSI 2 + (ΔV OSO / G) 2] (3) Specified by characterization. (4) Input voltage range of the INA818 input stage. The input range depends on the common-mode voltage, differential voltage, gain, and reference voltage. See Typical Characteristic curves Figure 51 through Figure 54 for more information. (5) Total RTI voltage noise is equal to: eN(RTI) = √[eNI 2 + (e NO / G) 2] (6) The values specified for G > 1 do not include the effects of the external gain-setting resistor, "RG". 7.5 Electrical Characteristics at TA = 25°C, VS = ±15 V, RL = 10 kΩ, VREF = 0 V, and G = 1 (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT INPUT VOSI Input stage offset voltage(1) (2) G = 100, RTI 10 35 µV TA = –40°C to 125°C (3) 75 µV vs temperature, TA = –40°C to 125°C 0.4 µV/°C VOSO Output stage offset voltage(1) (2) G = 1 50 300 µV TA = –40°C to 125°C (3) 800 µV vs temperature, TA = –40°C to 125°C 5 µV/°C PSRR Power-supply rejection ratio G = 1, RTI 110 120 dB G = 10, RTI 114 130 G = 100, RTI 130 135 G = 1000, RTI 136 140 zid Differential impedance 100 || 1 GΩ || pF zic Common-mode impedance 100 || 4 G Ω || pF RFI filter, –3-dB frequency 32 MHz VCM Operating input range(4) (V–) + 2 (V+) – 2 V VS = ±2.25 V to ±18 V, TA = –40°C to 125°C See Figure 51 to Figure 54 Input overvoltage range TA = –40°C to 125°C (3) ±60 V CMRR Common-mode rejection ratio At DC to 60 Hz, RTI, VCM = (V–) + 2 V to (V+) – 2 V, G = 1 90 105 dB At DC to 60 Hz, RTI, VCM = (V–) + 2 V to (V+) – 2 V, G = 10 110 125 At DC to 60 Hz, RTI, VCM = (V–) + 2 V to (V+) – 2 V, G = 100 130 145 At DC to 60 Hz, RTI, VCM = (V–) + 2 V to (V+) – 2 V, G = 1000 140 150 BIAS CURRENT IB Input bias current VCM = VS / 2 0.15 0.5 nA TA = –40°C to 125°C 2 IOS Input offset current VCM = VS / 2 0.15 0.5 nA TA = –40°C to 125°C 2 NOISE VOLTAGE eNI Input stage voltage noise(5) f = 1 kHz, G = 100, RS = 0 Ω 8 nV/ √Hz fB = 0.1 Hz to 10 Hz, G = 100, RS = 0 Ω 0.19 µVPP eNO Output stage voltage noise(5) f = 1 kHz, RS = 0 Ω 80 nV/ √Hz fB = 0.1 Hz to 10 Hz, RS = 0 Ω 2.6 µVPP In Noise current f = 1 kHz 130 fA/ √Hz fB = 0.1 Hz to 10 Hz, G = 100 4.7 pAPP GAIN G Gain equation 1 + (50 k Ω / RG) V/V Range of gain 1 1000 V/V GE Gain error G = 1, VO = ±10 V ±0.005% ±0.025% G = 10, VO = ±10 V ±0.025% ±0.15% G = 100, VO = ±10 V ±0.025% ±0.15% G = 1000, VO = ±10 V ±0.05% Gain vs temperature(6) G = 1, TA = –40°C to 125°C ±5 ppm/°C G > 1, TA = –40°C to 125°C ±35 |
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