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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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FDD6676A 데이터시트(PDF) 1 Page - Fairchild Semiconductor |
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FDD6676A 데이터시트(HTML) 1 Page - Fairchild Semiconductor |
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1 / 8 page  April 2005 ©2005 Fairchild Semiconductor Corporation FDD6676AS Rev A(X) FDD6676AS 30V N-Channel PowerTrench ® SyncFET ™ General Description The FDD6676AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6676AS includes a patented combination of a MOSFET monolithically integrated with a Schottky diode using Fairchild’s monolithic SyncFET technology. Applications • DC/DC converter • Low side notebook Features • 90 A, 30 V RDS(ON) = 5.7 mΩ @ VGS = 10 V RDS(ON) = 7.1 mΩ @ VGS = 4.5 V • Includes SyncFET schottky body diode • Low gate charge (46nC typical) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability G S D TO-252 D-PAK (TO-252) S G D Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 3) 90 A – Pulsed (Note 1a) 100 Power Dissipation for Single Operation (Note 1) 70 (Note 1a) 3.1 PD (Note 1b) 1.3 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case (Note 1) 1.8 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD6676AS FDD6676AS 13’’ 12mm 2500 units FDD6676AS FDD6676AS_NL (Note 4) 13’’ 12mm 2500 units |
유사한 부품 번호 - FDD6676A |
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유사한 설명 - FDD6676A |
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