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IKW40T120 데이터시트(Datasheet) 8 Page - Infineon Technologies AG

부품명 IKW40T120
상세내용  LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARAALEL EMCON HE DIODE
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제조사  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
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IKW40T120
^
TrenchStop Series
Power Semiconductors
8
Preliminary / Rev. 1 Jul-02
10A
20A
30A
40A
50A
60A
70A
0,0mJ
5,0mJ
10,0mJ
15,0mJ
20,0mJ
25,0mJ
E
ts*
E
off
*) E
on and Etsinclude losses
due to diode recovery
E
on*
5Ω
15Ω
25Ω
35Ω
0 mJ
5 mJ
10 mJ
15 mJ
E
ts*
E
on*
*) E
on and Ets include losses
due to diode recovery
E
off
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, RG=15Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, IC=40A,
Dynamic test circuit in Figure E)
50°C
100°C
150°C
0mJ
5mJ
10mJ
15mJ
E
ts*
E
on*
*) E
on and Ets include losses
due to diode recovery
E
off
400V
500V
600V
700V
800V
0mJ
5mJ
10mJ
15mJ
E
ts*
E
on*
*) E
on and Ets include losses
due to diode recovery
E
off
TJ, JUNCTION TEMPERATURE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=40A, RG=15Ω,
Dynamic test circuit in Figure E)
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ=150°C,
VGE=0/15V, IC=40A, RG=15Ω,
Dynamic test circuit in Figure E)




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