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IKW40T120 데이터시트(Datasheet) 10 Page - Infineon Technologies AG

부품명 IKW40T120
상세내용  LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARAALEL EMCON HE DIODE
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제조사  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
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IKW40T120
^
TrenchStop Series
Power Semiconductors
10
Preliminary / Rev. 1 Jul-02
0V
200V
400V
600V
0A
20A
40A
60A
1.5us
1us
0.5us
0us
I
C
V
CE
0V
200V
400V
600V
0A
20A
40A
60A
1.5us
1us
0.5us
0us
I
C
V
CE
t
, TIME
t
, TIME
Figure 21. Typical turn on behavior
(VGE=0/15V, RG=15Ω, Tj = 150°C,
Dynamic test circuit in Figure E)
Figure 22. Typical turn off behavior
(VGE=15/0V, RG=15Ω, Tj = 150°C,
Dynamic test circuit in Figure E)
10µs
100µs
1ms
10ms
100ms
10
-3K/W
10
-2K/W
10
-1K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D
=0.5
10µs
100µs
1ms
10ms
100ms
10
-3K/W
10
-2K/W
10
-1K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D
=0.5
tP, PULSE WIDTH
tP, PULSE WIDTH
Figure 23. IGBT transient thermal resistance
(D = tp / T)
Figure 24. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
R
,( K/ W )
τ , (s ) =
0.159
1.10*10
-1
0.133
1.56*10
-2
0.120
1.35*10
-3
0.038
1.51*10
-4
C 1 =
τ1/R1
R 1
R 2
C 2 =
τ2/R2
R
,( K/ W )
τ , (s ) =
0.228
1.01*10
-1
0.257
1.15*10
-2
0.238
1.30*10
-3
0.087
1.53*10
-4
C 1 =
τ1/R1
R 1
R 2
C 2 =
τ2/R2




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