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IKW40T120 데이터시트(Datasheet) 11 Page - Infineon Technologies AG

부품명 IKW40T120
상세내용  LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARAALEL EMCON HE DIODE
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제조사  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
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IKW40T120
^
TrenchStop Series
Power Semiconductors
11
Preliminary / Rev. 1 Jul-02
400A/µs
600A/µs
800A/µs
1000A/µs
0ns
100ns
200ns
300ns
400ns
500ns
600ns
T
J=25°C
T
J=150°C
400A/µs
600A/µs
800A/µs
1000A/µs
0µC
2µC
4µC
6µC
8µC
T
J=25°C
T
J=150°C
diF/dt, DIODE CURRENT SLOPE
diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(VR=600V, IF=40A,
Dynamic test circuit in Figure E)
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(VR=600V, IF=40A,
Dynamic test circuit in Figure E)
400A/µs
600A/µs
800A/µs
1000A/µs
0A
5A
10A
15A
20A
25A
30A
35A
40A
T
J=25°C
T
J=150°C
400A/µs
600A/µs
800A/µs
1000A/µs
-0A/µs
-100A/µs
-200A/µs
-300A/µs
-400A/µs
T
J=25°C
T
J=150°C
diF/dt, DIODE CURRENT SLOPE
diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
(VR=600V, IF=40A,
Dynamic test circuit in Figure E)
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR=600V, IF=40A,
Dynamic test circuit in Figure E)




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