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SI4300DY-TI 데이터시트(PDF) 2 Page - Vishay Siliconix |
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SI4300DY-TI 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 5 page Si4300DY Vishay Siliconix www.vishay.com 2-2 Document Number: 71772 S-03951—Rev. B, 26-May-03 MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED). Parameter Symbol Test Condition Min Typa Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 0.8 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V 100 mA Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V, TJ = 85_C 2000 mA On-State Drain Currentb ID(on) VDS w 5 V, VGS = 10 V 30 A Drain Source On State Resistanceb rDS( ) VGS = 10 V, ID = 9 A 0.0155 0.0185 W Drain-Source On-State Resistanceb rDS(on) VGS = 4.5 V, ID = 7 A 0.0275 0.033 W Forward Transconductanceb gfs VDS = 15 V, ID = 9 A 16 S Schottky Diode Forward Voltageb VSD IS = 1.0 A, VGS = 0 V 0.47 0.5 V Dynamica Total Gate Charge Qg 8.7 13 Gate-Source Charge Qgs VDS = 15 V, VGS = 5 V, ID = 9 A 2.25 nC Gate-Drain Charge Qgd DS , GS , D 4.2 Gate Resistance Rg 0.5 2.7 W Turn-On Delay Time td(on) 11 16 Rise Time tr VDD = 15 V, RL = 15 W 8 15 Turn-Off Delay Time td(off) VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 22 30 ns Fall Time tf 9 15 Source-Drain Reverse Recovery Time trr IF = 2.3 A, di/dt = 100 A/ms 32 60 Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Forward Voltage Drop VF IF = 1.0 A 0.47 0.5 V Forward Voltage Drop VF IF = 1.0 A, TJ = 125_C 0.36 0.42 V Vr = 24 V 0.004 0.100 Maximum Reverse Leakage Current Irm Vr = 24 V, TJ = 100_C 0.7 10 mA g rm Vr = - 24 V, TJ = 125_C 3.0 20 Junction Capacitance CT Vr = 10 V 50 pF |
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