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IKP10N60T 데이터시트(Datasheet) 4 Page - Infineon Technologies AG

부품명 IKP10N60T
상세내용  Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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제조사  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
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IKP10N60T
TrenchStop Series
IKB10N60T
Power Semiconductors
4
Rev. 2 Oct-04
Switching Characteristic, Inductive Load,
at Tj=175
°C
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
t d(on)
-
10
-
Rise time
t r
-
11
-
Turn-off delay time
t d (off)
-
233
-
Fall time
t f
-
63
-
ns
Turn-on energy
E on
-
0.26
-
Turn-off energy
E off
-
0.35
-
Total switching energy
E ts
T j=175
°C,
V CC=400V, IC= 10A,
V GE=0/15V ,
R G = 23
L σ
1) =60nH,
C σ
1) =40pF
Energy losses include
“tail” and diode
reverse recovery.
-
0.61
-
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t rr
-
200
-
ns
Diode reverse recovery charge
Q rr
-
0.92
-
µC
Diode peak reverse recovery current
I rr m
-
13
-
A
Diode peak rate of fall of reverse
recovery current during tb
di rr/dt
T j=175
°C
V R =400V, IF =10A ,
di F /dt =880A/
µs
-
390
-
A/
µs
1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.




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