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AFBR-S4N44C013 데이터시트(Datasheet) 4 Page - Broadcom Corporation.

부품명 AFBR-S4N44C013
상세내용  4x4 NUV-HD Silicon Photo Multiplier Array
PDF  7 Pages
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제조사  BOARDCOM [Broadcom Corporation.]
홈페이지  http://www.broadcom.com
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Broadcom
AFBR-S4N44C103-DS101
4
AFBR-S4N44C013 Data Sheet
4×4 NUV-HD Silicon Photo Multiplier Array
Optical and Electrical Features
Parameters have been measured for two recommended working points: Typical for general purpose applications and
Performance
for best timing performance.
Parameter
Symbol
Min.
Typ.
Max.
Units
Reference Plots
Spectral Range
300
900
nm
Peak Sensitivity Wavelength
PK
—420
nm
Figure 4
Breakdown Voltage
VBD
—26.9—
V
Figure 6
Temperature Coefficient of Breakdown Voltage
VBR/T—
26
mV/K
Parameter
Symbol
Typ.a
a. Typical values are measured at 3V above breakdown; performance at 7V above breakdown.
Perf.a
Units
Reference Plots
Photo Detection Efficiencyb
b. Measured at peak sensitivity-wavelength. Measurement does not include correlated noise, such as afterpulsing or
optical crosstalk.
PDE
43
55
%
Figure 5
Dark Current
ID
0.5
3.4
µA
Figure 6
Dark Count Ratec
c. Measured at 0.5 p.e. amplitude. Measurement does not include delayed correlated events.
DCR
1.7
3.7
Mcps
Figure 7, Figure 10
Dark Count Rate Per Unit Area
DCRmm²
120
270
kcps/mm²
Gain
G
1.6
3.3
×106
Figure 8, Figure 11
Optical Crosstalk
PXtalk
929
%
Figure 9, Figure 12
Afterpulsing Probability
PAP
<1
1
%
Figure 9, Figure 12
Recharge Time Constantd
d. Measured on 1 × 1 mm2 devices with an input impedance of 20Ω.
fall
55
50
ns
Figure 13
Nominal Terminal Capacitancee
e. Measured using input sine wave with f = 200 kHz and Vin = 500 mV.
CT
990
760
pF
Temperature Coefficient of Gain
G/T1.1
1.0
×104/K




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