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IPB108N15N3G 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

부품명 IPB108N15N3G
상세설명  Isc N-Channel MOSFET Transistor
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1
Isc N-Channel MOSFET Transistor
IPB108N15N3G
·
FEATURES
·
With To-263(D2PAK) package
·
Low input capacitance and gate charge
·
Low gate input resistance
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
APPLICATIONS
·
Switching applications
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
150
V
VGSS
Gate-Source Voltage
±
20
V
ID
Drain Current-ContinuousTc=25℃
Tc=100℃
83
59
A
IDM
Drain Current-Single Pulsed
332
A
PD
Total Dissipation @TC=25℃
214
W
Tch
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(ch-c)
Channel-to-case thermal resistance
0.7
℃
/W
Rth(ch-a)
Channel-to-ambient thermal resistance
40
℃
/W


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