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IRF2807ZS 데이터시트(Datasheet) 2 Page - Inchange Semiconductor Company Limited

부품명 IRF2807ZS
상세내용  Isc N-Channel MOSFET Transistor
PDF  2 Pages
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제조사  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
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isc website:www.iscsemi.cn
isc & iscsemi is registered trademark
2
Isc N-Channel MOSFET Transistor
IRF2807ZS
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
75
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=0.25mA
2.0
4.0
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=53A
7.5
9.4
IGSS
Gate-Source Leakage Current
VGS= ±20V;VDS= 0V
±
0.2
μ
A
IDSS
Drain-Source Leakage Current
VDS=75V; VGS= 0V;Tj=25℃
VDS=75V; VGS= 0V;Tj=125℃
20
250
μ
A
VSDF
Diode forward voltage
ISD=53A, VGS = 0 Vs
1.3
V




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