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IRF3315S 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IRF3315S 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 Isc N-Channel MOSFET Transistor IRF3315S ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA 150 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.25mA 2.0 4.0 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=12A 82 mΩ IGSS Gate-Source Leakage Current VGS= ±30V;VDS=0V ± 0.1 μ A IDSS Drain-Source Leakage Current VDS=150V; VGS= 0V;Tj=25℃ VDS=120V; VGS= 0V;Tj=150℃ 25 250 μ A VSDF Diode forward voltage ISD=21A, VGS = 0 V 1.3 V |
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