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IKW15T120 데이터시트(Datasheet) 3 Page - Infineon Technologies AG

부품명 IKW15T120
상세내용  LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EMCON HE DIODE
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제조사  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
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IKW15T120
^
TrenchStop Series
Power Semiconductors
3
Preliminary / Rev. 1 Jul-02
Dynamic Characteristic
Input capacitance
C iss
-
1100
-
Output capacitance
C os s
-
100
-
Reverse transfer capacitance
C rs s
VCE =25V,
VGE =0V,
f
=1MHz
-50
-
pF
Gate charge
Q Gat e
VCC =960V, I C =15A
VGE =15V
-85
-
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
L E
T O-247AC
-
-
13
nH
Short circuit collector current
1)
I C( SC )
VGE =15V,t SC≤ 10 µs
VCC = 600V,
T j = 25 ° C
-90
-
A
Switching Characteristic, Inductive Load,
at Tj=25 °C
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
t d( o n)
-50
-
Rise time
t r
-30
-
Turn-off delay time
t d( of f)
-
520
-
Fall time
t f
-60
-
ns
Turn-on energy
Eon
-1.3
-
Turn-off energy
Eoff
-1.4
-
Total switching energy
Ets
T j =2 5 °C,
VCC =600V, IC =15A,
VGE =- 15 /15V,
R G =56 Ω,
L σ
2) =180nH,
C σ
2) =39pF
Energy losses include
“tail” and diode
reverse recovery.
-2.7
-
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t rr
-
140
-
ns
Diode reverse recovery charge
Q rr
-1.9
-
µC
Diode peak reverse recovery current
I rr m
-17
-
A
Diode peak rate of fall of reverse
recovery current during tb
dirr /d t
T j =2 5 °C,
VR =600 V, IF =15A,
diF/dt =600A/ µs
-
230
-
A/
µs
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.




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